0.25 W Ka-Band Amplifier
27 - 31.5 GHz
MAAP-011340-DIE
Rev. V1
Block Diagram
Features
• 24 dB Gain
• 33 dBm Output IP3
• 24 dBm P1dB
• 25 dBm P3dB
• 5.5 V Drain Supply
• Bare Die
• RoHS* Compliant
Applications
• Ka-band Satellite Communication
Description
The MAAP-011340-DIE is a 1/4 W Ka-band
amplifier. The amplifier has a 24 dBm typical P1dB
and a 25 dBm typical P3dB with 24 dB of gain. The
typical OIP3 is 33 dBm. The drain bias supply is
5.5 V. The gate voltage is adjusted to set the drain
current to 275 mA.
Pad Configuration2,3,4
Pad #
Pad Name
GND
RFIN
Description
Ground
Die size with power detector is 1.430 mm x 0.985
mm x 0.050 mm.
1, 3, 4, 7, 8, 10
2
RF Input
5
VGG
Gate Voltage
Drain Voltage
RF Output
Ordering Information
6
9
VDD
RFOUT
VDET
MAAP-011340-DIE
MAAP-011340-DIESMB
1. Die quantity varies.
Gel Pack1
11
Detector Output Voltage
No Connection
Sample Board
12 - 14
NC
2. Pads 1, 3, 8, and 10 are connected to ground on the die
through backside vias. Bonds from these ground pads to
ground on the application PCB are recommended to form a
coplanar transition for improved return losses.
3. Pads 4, 7, 12, 13, and 14 are bond pads for DC screening only
in production test environment.
4. The backside of the die must be connected to RF, DC, and
thermal ground.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOMTechnology Solutions Inc. (MACOM) andits affiliatesreserve theright to makechanges to the product(s) orinformationcontained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information andsupport please visit:
https://www.macom.com/support
DC-0023846