Datasheet > MAAP-011199-DIE

MAAP-011199-DIE

更新时间： 2024-11-25 14:55:27

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
10页	947K
描述
Power Amplifier, 80 - 100 GHz

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数据手册

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MAAP-011199-DIE 数据手册

Power Amplifier

80 - 100 GHz

MAAP-011199-DIE

Rev. V1

Features

Functional Schematic

•

Saturated Output Power: 24 dBm

Gain: 12 dB

NC VD1 VD2 VD3A

Input Return Loss: >15 dB

Output Return Loss: >15 dB

Reverse Isolation: >30 dB

Dimension: 1800 x 2000 x 50 µm

RoHS* Compliant

GND

RF OUT

GND

Bare Die

GND

RF IN

GND

Applications

• Point-to-Point Communications / Short Haul

• High Resolution Radar

• Sensing

• Narrow bandwidth Millimeter Wave Imaging

VG1 VG2 VG3 VD3B

Description

Pad Configuration¹

The MAAP-011199-DIE is a balanced 3 stage GaAs

pHEMT MMIC power amplifier. The device operates

from 80 to 100 GHz and provides typically 24 dBm of

output power. The power amplifier’s balanced

architecture results in excellent input and output

match to 50 Ω across the entire 80 - 100 GHz

frequency band and the multi-stage design provides

high gain of 12 dB.

RF IN

GND

NC²

2, 9, 11, 18

3, 4, 8, 12, 17

VD1

VD2

VD3A

RF OUT

VD3B

VG3

Ordering Information

VG2

MAAP-011199-DIE

Die in Gel Pack

VG1

1. Backside of die must be connected to RF, DC and thermal

ground.

2. These pins do not need to be connected. They are grounded

on the MMIC.

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0009688

12 3 4 5 6 7...10

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