MA8334 Series
High Power Multi-Throw PIN Diode Switch Modules
V5
Absolute Maximum Ratings 1
Features
SPDT and SP3T Series Diode Designs
Low Intermodulation Distortion, 80 dBc
High Average Power, 100 W
Wide Bandwidth, 10 MHz to 1000 MHz
Low Insertion Loss
High Isolation
RoHS Compliant
Parameter
Absolute Maximum
Voltage Rating per Diode
+ 250 mA per diode
-65 °C to +125 °C
Reverse Voltage
Forward Current
Operating Temperature
Storage Temperature
Junction Temperature
-65 °C to +150 °C
Description and Applications
+175 °C
M/A-COM Technology Solutions MA8334 Series
of multi-throw high power switch modules are
SPDT and SP3T devices intended for use from
10 MHz to 1000 MHz. They are designed to func-
tion with an input power of 100 watts, CW, into a
50 Ω load with a nominal source VSWR of 1.3:1.
These switch modules are constructed using ad-
vanced hybrid technology and utilize PIN diode
chips that have been optimized for low loss and
high reliability. These switch modules make use of
M/A-COM Tech’s, high voltage, CERMACHIP™
PIN diode chip distinguished by its low thermal
resistance and low intermodulation distortion. Ap-
plications for the MA8334 switch modules include
100W incident power T/R antenna and diversity
switches. Typical bias conditions for nominal
switch operation are +50mA @ +1V for the low
loss condition and -100V @ 0 mA for isolation.
5 W @ + 25 °C .
derated to 0 W @ + 125 °C .
Power Dissipation
1. Operation of this device above any one of these parameters
may cause permanent damage.
MA
8334
-001
MA
8334
-004
S2
S2
Circuit for Common Cathode Biasing
S3
S1
S3
S4
S4
Internal Wiring Diagram
Recommended D.C. Bias :
Low Loss: +50 mA @+ 1V, Isolation:-100V @ 0mA
1
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