Datasheet > MA4P7493-134

MA4P7493-134

更新时间： 2024-11-25 14:52:11

品牌	Logo	应用领域
MACOM		二极管
页数	文件大小	规格书
9页	433K
描述
Microwave PIN Switch Diode

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MA4P7493-134 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.75	二极管类型：	PIN DIODE
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MA4P7493-134 数据手册

Silicon PIN / NIP Diode Chips

PIN / NIP Diode Chips

Rev. V28

Features

PIN Chip

•

Switch & Attenuator Die

Extensive Selection of I-Region Lengths

Hermetic

Glass Passivated Cermachip

Oxide Passivated Planar Chips

Voltage Ratings to 3000 V

Fast Switching Speed

Low Loss

Anode

High Isolation

RoHS* Compliant

NIP Chip

Description

MACOM offers

a comprehensive line of low

capacitance, planar and mesa, silicon PIN/NIP diode

chips which use ceramic glass and silicon nitride

passivation technology. The silicon PIN/NIP chip

series of devices cover a broad spectrum of perfor-

mance requirements for control circuit applications.

They are available in several choices of I-region

lengths and have been optimally designed to mini-

Cathode

mize

parametric trade offs when considering low

capacitance, low series resistance, and high

breakdown voltages. Their small size and low

parasitics, make them an ideal choice for

broadband, high frequency, micro-strip hybrid

assemblies.

Absolute Maximum Ratings¹

T_A= +25°C (Unless otherwise specified)

The attenuator line of PIN diode chips are a planar

or mesa construction and because of their thicker

I-regions and predictable R_Svs. I characteristics,

they are well suited for low distortion attenuator

and switch circuits. Incorporated in the chip’s

construction is MACOM’s, time proven, hard glass,

Cermachip process. The hard glass passivation

completely encapsulates the entire PIN junction area

resulting in a hermetically sealed chip which has

been qualified in many military applications. These

Cermachip diodes are available in a wide range of

voltages, up to 3,000 volts, which are capable of

controlling kilowatts of RF power.

Parameter

Absolute Maximum

Per P/N R_svs. I Graph

Per Specification Table

Forward Current (I_F)

Reverse Voltage (V_R)

Power Dissipation (W)

Operating Temperature

Storage Temperature

Junction Temperature

Mounting Temperature

175°C – T_ambient°C

Theta

-55°C to +175°C

-55°C to +200°C

+175°C

+320°C for 10 seconds

Many of MACOM ’s silicon PIN diode chips are also available

in several different package styles. Please refer to the

“Packaged PIN Diode Datasheet” for case style availability

and electrical specifications located on the MACOM website.

Also for high voltage, high power devices refer to

MA4PK2000.

1. Exceeding these limits may cause permanent damage to the

chip.

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0008899

12 3 4 5 6 7...9

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