AN3021
Rev. V2
PIN Diodes for Microwave Switch Designs
Introduction
This Application Note is intended to provide practical guidance in the selection of PIN Diodes for switch control
circuit functions. Switches, Digital and Analog Attenuators, and Limiters each have unique functions that require
proper device selection. The design difficulty lies within the parametric translation from Diode Specifications, to
the circuit designers’ Microwave Specifications. Diode parametric language such as Vb, Vf, Ct, Rs, τL, θ, must
convert into Insertion Loss, VSWR, Isolation, P1dB, Input IP3, RF Operating Power, RF Power Dissipation, and
D.C. Power Consumption Specification Terminology.
In addition to actual diode parameters, package parasitics play a significant role in determining switch circuit per-
formance. Package capacitance, package inductance, package electrical resistance, and package thermal im-
pedance are extremely important considerations to determine the effective frequency bandwidth and maximum
incident power for reliable switch operation.
The manufacturing methodology dictates the type of diode selection. Surface mount assembly will mandate the
usage of either plastic, HMIC SURMOUNT, or MELF & HiPAX ceramic devices. Chip and Wire ( Hybrid ) manu-
facturing will determine the usage of Cermachips, Flip Chips, or Beam Lead Devices. Schematics for the most
common switch designs: Series-Exclusive, Shunt-Exclusive, and Series-Shunt are outlined below for considera-
tion.
The Decision Making Process for PIN Diode Selection for Microwave Switch Design
The following procedure outlines and Effective Process for PIN Diode Selection for Switch Design.
1. Determine the Preferred Type of Manufacturing for the PIN Diode in the Switch Design: Surface
Mount or Chip and Wire (Hybrid) Manufacturing.
2. Determine the Frequency of Operation and RF Power Handling of the Switch Design.
3. Use Table 1, “Relative Switch Performance and Design Evaluation Matrix” to determine the Type of
Switch Design that Best Satisfies the Particular Switch Specifications and Requirements.
4. Use Table 2, “Relative PIN Diode Performance Evaluation Matrix” to Determine the Type of PIN Di-
ode that Best Satisfies the Switch Design Selected from Table 1.
5. Use Table 3, “PIN Diode P/N Series Matrix” to Determine the PIN Diode P/N Series that Best Satis-
fies the Type of PIN Diode Selected from Table 2.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
5秒后页面跳转
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
