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MA46580-1209 PDF预览

MA46580-1209

更新时间: 2024-10-02 14:54:31
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
4页 645K
描述
GaAs Hyperabrupt

MA46580-1209 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-XDMW-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.17Is Samacsys:N
最小击穿电压:18 V配置:SINGLE
二极管电容容差:0.5%最小二极管电容比:4.5
标称二极管电容:20 pF二极管元件材料:GALLIUM ARSENIDE
二极管类型:VARIABLE CAPACITANCE DIODE频带:KA BAND
JESD-30 代码:R-XDMW-F2元件数量:1
端子数量:2封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:MICROWAVE
峰值回流温度(摄氏度):260最大功率耗散:0.025 W
认证状态:Not Qualified最小质量因数:3000
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
变容二极管分类:HYPERABRUPTBase Number Matches:1

MA46580-1209 数据手册

 浏览型号MA46580-1209的Datasheet PDF文件第2页浏览型号MA46580-1209的Datasheet PDF文件第3页浏览型号MA46580-1209的Datasheet PDF文件第4页 
MA46580 & MA46585  
Beam Lead Constant Gamma GaAs Tuning Varactor  
Rev. V4  
Features  
Absolute Maximum Ratings @ TA=+25 °C  
(Unless Otherwise Noted)  
1
Constant Gamma = 1.0 & 1.25 available  
High Q (3000 minimum at 4V 50MHz)  
Strong Beam Construction  
(Minimum 10 gram beam strength)  
Low Parasitic Capacitance  
Parameter  
Absolute Maximum  
18V  
Reverse Voltage  
Operating Temperature  
-65°C to +150°C  
Close Capacitance tracking  
Lead-Free (RoHs Compliant) equivalents  
available with 260°C reflow compatibility  
Storage Temperature  
Power Dissipation  
Beam Strength  
-65°C to +200°C  
25mW at 25 °C  
10 grams minimum  
Description  
1. Operation of this device above any one of these parameters  
may cause permanent damage.  
The MA46580 & MA46585 series beam lead con-  
stant gamma tuning varactors are hyper-abrupt junc-  
tion gallium arsenide diodes with a constant gamma  
of 1.0 or 1.25. The high Q values and the elimination  
of package parasitics make these varactors very  
attractive for voltage controlled oscillators that re-  
quire linear tuning. These tuning diodes are useful at  
frequencies as high as 40 Ghz.  
Applications  
These beam lead constant gamma tuning varac-  
tors are particularly useful in broadband VCO’s,  
where linear frequency tuning is an important  
feature. They are also very useful for FM modu-  
lating a source for telecommunication transmitter  
and in many cases such circuits can be designed  
without a linearization circuit.  
The beam lead design eliminates almost all of the  
package parasitics resulting in improved linearity of  
the junction capacitance change with applied re-  
verse bias voltage. This improves tracking between  
diodes and can improve VCO linearity.  
Electrical Specifications @ TA = +25 °C  
Electrical Specifications @ TA = +25 °C  
Gamma = 1.02  
Gamma = 1.252  
Gamma4 = 0.9 - 1.1, VR = 2 - 12 Volts  
Gamma4 = 1.13-1.38, VR = 2 - 12 Volts  
Breakdown Voltage @ IR = 10µA, Vb = 18 V Min  
Reverse Leakage Current @ VR =14V, IR = 50 nA Max  
Breakdown Voltage @ IR = 10µA, Vb = 18 V Min  
Reverse Leakage Current @ VR =14V, IR = 50 nA Max  
Total  
Capaci-  
tance1  
+/-20%  
Total  
Capaci-  
tance  
Total  
Total  
Capaci-  
tance  
Q
Mini-  
mum  
Q
Mini-  
mum  
Case  
Style  
Case Capaci-  
Style  
tance1  
+/-20%  
Ratio  
Ratio  
Part Number  
Part Number  
Vr=2V  
Vr=12V f=50MHz  
Vr=4V  
Vr=2V  
Vr=12V f=50MHz  
Vr=4V  
Vr=4V  
Vr=4V  
(pF)  
0.5  
-
-
(pF)  
0.5  
-
-
MA46580-1209 1209  
4.5-6.5  
3000  
MA46585-1209 1209  
Notes:  
3.2-5.2  
3000  
1. Capacitance is measured at 1 MHz.  
2. All junctions are hyperabrupt with nominal Γ= 1.0 or 1.25  
3. Reverse voltage (VB) is measured at 10 microamps.  
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  

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