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MA40192MQ PDF预览

MA40192MQ

更新时间: 2024-11-12 13:00:31
品牌 Logo 应用领域
ASI 肖特基二极管微波混频二极管
页数 文件大小 规格书
2页 26K
描述
Mixer Diode, X Band, 12dB Noise Figure, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

MA40192MQ 技术参数

生命周期:Active包装说明:O-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.74外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:X BAND
JESD-30 代码:O-LALF-W2最大噪声指数:12 dB
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

MA40192MQ 数据手册

 浏览型号MA40192MQ的Datasheet PDF文件第2页 
MA40192  
SCHOTTKY BARRIER MIXER DIODE  
DESCRIPTION:  
The MA40192 is a Silicon Schottky  
Barrier Diode Designed for Starved LO  
Mixer Applications up to 10 GHz.  
PACKAGE STYLE 01  
FEATURES:  
Replacement for MA/COM MA40192  
Available as matched pairs and  
matched quads  
Hermetic Glass Package  
MAXIMUM RATINGS  
10 mA  
IF  
VR  
2.0 V  
300 mW @ TC = 25 OC  
PDISS  
TJ  
O
-65 OC to +150 C  
O
-65 OC to +150 C  
TSTG  
Tsoldering  
+230 OC for 5 Seconds  
ASI ORDER CODE: ASI30285  
CHARACTERISTICS TC = 25 O  
C
SYMBOL  
VF  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IF = 1.0 mA  
200  
250  
mV  
VBR  
0.8  
V
IR = 200 µA  
CJ0  
VR = 0 V  
f = 1 MHz  
0.2  
pF  
Con. Loss  
5.5  
9.0  
250  
6.0  
12.0  
dB  
dB  
F = 9.375 Ghz  
NIF = 1.5 dB  
PLO = -10 dBm  
IF = 10 KHz  
NF  
ZIF  
RL = 22 Ω  
Ohms  
Note: Add MP suffix for matched pairs and MQ suffix for matched quads (ZIF = 25/NF = 0.5 dB).  
A D V A N C E D S E M I C O N D U C T O R, I N C  
REV. A  
1/2  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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