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MA3200TMG PDF预览

MA3200TMG

更新时间: 2024-01-29 16:48:11
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 31K
描述
Zener Diode, 20V V(Z), 0.2W, Silicon, Unidirectional

MA3200TMG 技术参数

生命周期:Obsolete包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.81Is Samacsys:N
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:180 Ω
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.2 W认证状态:Not Qualified
标称参考电压:20 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子形式:GULL WING端子位置:DUAL
最大电压容差:5.76%工作测试电流:5 mA
Base Number Matches:1

MA3200TMG 数据手册

 浏览型号MA3200TMG的Datasheet PDF文件第2页 
Zener Diodes Composite Elements  
MA3200W  
Silicon planer type  
Unit : mm  
2.8 +00..32  
Constant voltage, constant current, waveform  
cripper and surge absorption circuit  
0.65±0.15  
1.5 +00..0255  
0.65±0.15  
0.5R  
4
3
1
2
Features  
Mini type package (4-pin)  
Two-element wiring in parallel of MA3200  
Absolute Maximum Ratings (Ta= 25˚C)  
Rating  
Unit  
mA  
mA  
mA  
mA  
mW  
mW  
W
Parameter  
Symbol  
IF(AV)  
IF(AV)  
IFRM  
0.1 to 0.3  
100  
Single  
Double  
Single  
Double  
Single  
Double  
0.4±0.2  
1 : Cathode 1  
2 : Cathode 2  
3 : Anode 2  
4 : Anode 1  
Average forward current  
75  
200  
Instanious forward current  
Total power dissipation  
150  
IFRM  
Mini Type Package (4-pin)  
1
150  
Ptot  
Ptot  
*
*
1
Internal Connection  
110  
2
15  
Non-repetitive reverse surge power dissipation  
Junction temperature  
PZSM  
Tj  
*
125  
˚C  
4
3
1
2
– 55 to + 125  
˚C  
Storage temperature  
*1 With a printed-circuit board  
Tstg  
2
*
t=100µ s, Tj=125˚C  
1
*
Electrical Characteristics (Ta= 25˚C)  
Parameter  
Forward voltage  
Symbol  
Condition  
min  
typ  
0.8  
max  
0.9  
22.0  
55  
Unit  
VF  
IF=10mA  
IZ= 5mA  
IZ= 5mA  
VR= 13V  
IZ= 5mA  
V
Zener voltage  
VZ*2  
RZ  
17.0  
20.0  
15  
V
Operating resistance  
Reverse current  
IR  
SZ*3  
50  
µA  
Temperature coefficient of zener voltage  
Terminal capacitance  
12.4  
16.4  
36  
18.4  
60  
mV/˚C  
pF  
CD  
VR= 0V, f=1MHz  
*
*
*
1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.  
2 : Guaranteeed at 20ms after power application  
3 : Tj= 25 to 125˚C  
Marking  
20W  

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