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MA24D54 PDF预览

MA24D54

更新时间: 2024-11-11 20:11:23
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
2页 349K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, TMINIP2-F1, 2 PIN

MA24D54 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84应用:POWER
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MA24D54 数据手册

 浏览型号MA24D54的Datasheet PDF文件第2页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Schottky Barrier Diodes (SBD)  
MA24D54  
Silicon epitaxial planar type  
For rectication  
Unit: mm  
2.40 0.10  
0.15 0.05  
Features  
1
Forward current (Average) IF(AV) = 3.0Arectication is possible  
Small reverse current IR  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage  
Symbol  
VR  
Rating  
30  
Unit  
V
0.05  
Maximum peak reverse voltage  
Forward current (Average) *  
VRM  
30  
V
5°  
IF(AV)  
3
A
Non-repetitive peak forward surge  
current  
IFSM  
Tj  
A
Junction temperature  
Storage temperature  
150  
°C  
°C  
1: Anode  
2: Cathode  
T
st
–40 t+150  
TMiniP2-F1 Package  
Note) : 50 Hz sine wave 1 cycle (Nonrepetiive pak current)  
*
Marking Symbol: 4S  
Electcal Charaistics Ta = 25°C±3°
Parar  
Foward currnt  
Symol  
Conditions  
Min  
Typ  
Max  
0.37  
2.0  
Unit  
V
VF  
IR  
IF = 3.0A  
VR = 30 V  
Reverscurrent  
mA  
pF  
Terminal capac
Ct  
VR = 10 V, f = 1 MHz  
125  
40  
IF = IR = 100 mA, Irr = 10 mA  
Reverse recovery time
trr  
ns  
RL = 100 W  
2
3
*
Rth(j-a)  
Rth(j-a)  
55  
210  
10  
*
Thermal resistance  
°C/W  
Rth(j-l)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARJIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage  
of current from the operating equipment.  
3. 1: trr test Circuit  
*
Bias Application Unit (N-50BU)  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
I
rr = 10 mA  
F = IR = 100 mA  
L = 100 Ω  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
I
R
Pulse Generator  
Wave Form Analyzer  
(SAS-8130)  
Ri = 50 Ω  
(PG-10N)  
Rs = 50 Ω  
2: Mounted on an alumina PC board (board: 50 mm × 50 mm × 0.8 t, soldering land: 1.4 mm × 2.1 mm)  
*
*
3: With a glass epoxy PC board (board: 50 mm × 20 mm × 1.0 t, soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)  
Publication date: March 2007  
SKH00160AED  
1

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