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M95320-WDW6G PDF预览

M95320-WDW6G

更新时间: 2024-11-28 23:05:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
39页 553K
描述
64Kbit and 32Kbit Serial SPI Bus EEPROM With High Speed Clock

M95320-WDW6G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:0.169 INCH, ROHS COMPLIANT, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.22
其他特性:1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION最大时钟频率 (fCLK):10 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.4 mm内存密度:32768 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/5 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:SPI最大待机电流:0.000002 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M95320-WDW6G 数据手册

 浏览型号M95320-WDW6G的Datasheet PDF文件第2页浏览型号M95320-WDW6G的Datasheet PDF文件第3页浏览型号M95320-WDW6G的Datasheet PDF文件第4页浏览型号M95320-WDW6G的Datasheet PDF文件第5页浏览型号M95320-WDW6G的Datasheet PDF文件第6页浏览型号M95320-WDW6G的Datasheet PDF文件第7页 
M95640  
M95320  
64Kbit and 32Kbit Serial SPI Bus EEPROM  
With High Speed Clock  
FEATURES SUMMARY  
Compatible with SPI Bus Serial Interface  
Figure 1. Packages  
(Positive Clock SPI Modes)  
Single Supply Voltage:  
– 4.5 to 5.5V for M95xxx  
– 2.5 to 5.5V for M95xxx-W  
– 1.8 to 5.5V for M95xxx-R  
8
10MHz, 5MHz or 2MHz clock rate (depending  
on ordering options)  
1
5ms or 10ms Write Time (depending on  
ordering options)  
PDIP8 (BN)  
0.25 mm frame  
Status Register  
Hardware Protection of the Status Register  
BYTE and PAGE WRITE (up to 32 Bytes)  
Self-Timed Programming Cycle  
Adjustable Size Read-Only EEPROM Area  
Enhanced ESD Protection  
8
1
More than 100,000 or 1 million Erase/Write  
SO8 (MN)  
150 mil width  
Cycles (depending on ordering options)  
More than 40 Year Data Retention  
TSSOP8 (DW)  
169 mil width  
TSSOP14 (DL)  
169 mil width  
November 2003  
1/39  

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