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M95256-WDW6TG/K PDF预览

M95256-WDW6TG/K

更新时间: 2024-11-23 11:56:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
48页 500K
描述
256 Kbit serial SPI bus EEPROM with high-speed clock

M95256-WDW6TG/K 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TSSOP-8Reach Compliance Code:compliant
风险等级:5.62Is Samacsys:N
最大时钟频率 (fCLK):20 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
长度:4.4 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:SPI
最大待机电流:0.000005 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:3 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

M95256-WDW6TG/K 数据手册

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M95256-DR  
M95256 M95256-W M95256-R  
256 Kbit serial SPI bus EEPROM  
with high-speed clock  
Features  
Compatible with the Serial Peripheral Interface  
(SPI) bus  
Memory array  
– 256 Kb (32 Kbytes) of EEPROM  
– Page size: 64 bytes  
SO8 (MN)  
150 mil width  
Additional Write lockable Page (Identification  
page)  
Write  
– Byte Write within 5 ms  
– Page Write within 5 ms  
Write Protect: quarter, half or whole memory  
array  
SO8 (MW)  
200 mil width  
High-speed clock frequency (20 MHz)  
Single supply voltage: 1.8 V to 5.5 V  
More than 1 Million Write cycles  
More than 40-year data retention  
Enhanced ESD Protection  
Packages  
®
– ECOPACK2 (RoHS compliant and  
TSSOP8 (DW)  
169 mil width  
Halogen-free)  
WLCSP (CS)  
September 2010  
Doc ID 12276 Rev 11  
1/48  
www.st.com  
1

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