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M95256-WDW3G/K PDF预览

M95256-WDW3G/K

更新时间: 2024-11-19 11:55:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
48页 500K
描述
256 Kbit serial SPI bus EEPROM with high-speed clock

M95256-WDW3G/K 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:N数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8端子数量:8
字数:32768 words字数代码:32000
最高工作温度:125 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL电源:3/5 V
认证状态:Not Qualified串行总线类型:SPI
最大待机电流:0.000005 A子类别:EEPROMs
最大压摆率:0.006 mA表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.635 mm
端子位置:DUAL写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M95256-WDW3G/K 数据手册

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M95256-DR  
M95256 M95256-W M95256-R  
256 Kbit serial SPI bus EEPROM  
with high-speed clock  
Features  
Compatible with the Serial Peripheral Interface  
(SPI) bus  
Memory array  
– 256 Kb (32 Kbytes) of EEPROM  
– Page size: 64 bytes  
SO8 (MN)  
150 mil width  
Additional Write lockable Page (Identification  
page)  
Write  
– Byte Write within 5 ms  
– Page Write within 5 ms  
Write Protect: quarter, half or whole memory  
array  
SO8 (MW)  
200 mil width  
High-speed clock frequency (20 MHz)  
Single supply voltage: 1.8 V to 5.5 V  
More than 1 Million Write cycles  
More than 40-year data retention  
Enhanced ESD Protection  
Packages  
®
– ECOPACK2 (RoHS compliant and  
TSSOP8 (DW)  
169 mil width  
Halogen-free)  
WLCSP (CS)  
September 2010  
Doc ID 12276 Rev 11  
1/48  
www.st.com  
1

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