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M95160-WBN3G/G PDF预览

M95160-WBN3G/G

更新时间: 2024-01-30 02:42:24
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
40页 649K
描述
IC,SERIAL EEPROM,2KX8,CMOS,DIP,8PIN,PLASTIC

M95160-WBN3G/G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP, DIP8,.3针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.64
最大时钟频率 (fCLK):5 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDIP-T8
JESD-609代码:e3长度:9.27 mm
内存密度:16384 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:2KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
座面最大高度:5.33 mm串行总线类型:SPI
最大待机电流:0.000002 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):4.5 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mm最长写入周期时间 (tWC):10 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

M95160-WBN3G/G 数据手册

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M95160  
M95080  
16Kbit and 8Kbit Serial SPI Bus EEPROM  
With High Speed Clock  
FEATURES SUMMARY  
Compatible with SPI Bus Serial Interface  
Figure 1. Packages  
(Positive Clock SPI Modes)  
Single Supply Voltage:  
4.5 to 5.5V for M95xxx  
2.5 to 5.5V for M95xxx-W  
1.8 to 5.5V for M95xxx-R  
8
High Speed  
10MHz Clock Rate, 5ms Write Time  
1
Status Register  
PDIP8 (BN)  
Hardware Protection of the Status Register  
BYTE and PAGE WRITE (up to 32 Bytes)  
Self-Timed Programming Cycle  
Adjustable Size Read-Only EEPROM Area  
Enhanced ESD Protection  
8
More than 1 Million Erase/Write Cycles  
More than 40-Year Data Retention  
1
SO8 (MN)  
150 mil width  
TSSOP8 (DW)  
169 mil width  
Table 1. Product List  
Reference  
Part Number  
M95160  
TSSOP8 (DS)  
3x3mm² body size (MSOP)  
M95160  
M95080  
M95160-W  
M95160-R  
M95080  
UFDFPN8 (MB)  
2x3mm² (MLP)  
M95080-W  
M95080-R  
October 2004  
1/40  

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