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M95010-DW3G PDF预览

M95010-DW3G

更新时间: 2024-11-10 22:30:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
37页 588K
描述
4Kbit, 2Kbit and 1Kbit Serial SPI Bus EEPROM With High Speed Clock

M95010-DW3G 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOIC
包装说明:TSSOP,针数:8
Reach Compliance Code:compliant风险等级:5.56
Is Samacsys:N最大时钟频率 (fCLK):5 MHz
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.4 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:128X8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:SPI最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES温度等级:AUTOMOTIVE
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

M95010-DW3G 数据手册

 浏览型号M95010-DW3G的Datasheet PDF文件第2页浏览型号M95010-DW3G的Datasheet PDF文件第3页浏览型号M95010-DW3G的Datasheet PDF文件第4页浏览型号M95010-DW3G的Datasheet PDF文件第5页浏览型号M95010-DW3G的Datasheet PDF文件第6页浏览型号M95010-DW3G的Datasheet PDF文件第7页 
M95040  
M95020, M95010  
4Kbit, 2Kbit and 1Kbit Serial SPI Bus EEPROM  
With High Speed Clock  
FEATURES SUMMARY  
Compatible with SPI Bus Serial Interface  
(Positive Clock SPI Modes)  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M950x0  
2.5 to 5.5V for M950x0-W  
1.8 to 5.5V for M950x0-R  
High Speed  
8
10MHz Clock Rate, 5ms Write Time  
Status Register  
1
BYTE and PAGE WRITE (up to 16 Bytes)  
Self-Timed Programming Cycle  
Adjustable Size Read-Only EEPROM Area  
Enhanced ESD Protection  
More than 1 Million Erase/Write Cycles  
More than 40-Year Data Retention  
PDIP8 (BN)  
8
Table 1. Product List  
Reference  
1
Part Number  
M95040  
SO8 (MN)  
M95040  
M95020  
M95010  
M95040-W  
M95040-R  
M95020  
150 mil width  
M95020-W  
M95020-R  
M95010  
TSSOP8 (DW)  
169 mil width  
M95010-W  
M95010-R  
October 2004  
1/37  

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