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M93S46-WMN3P/S PDF预览

M93S46-WMN3P/S

更新时间: 2024-11-29 13:10:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
34页 526K
描述
MICROWIRE BUS SERIAL EEPROM

M93S46-WMN3P/S 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP-8Reach Compliance Code:compliant
风险等级:5.76最大时钟频率 (fCLK):2 MHz
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:16功能数量:1
端子数量:8字数:64 words
字数代码:64工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:64X16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
座面最大高度:1.75 mm串行总线类型:MICROWIRE
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

M93S46-WMN3P/S 数据手册

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M93S66, M93S56  
M93S46  
4Kbit, 2Kbit and 1Kbit (16-bit wide)  
MICROWIRE Serial Access EEPROM with Block Protection  
FEATURES SUMMARY  
Industry Standard MICROWIRE Bus  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M93Sx6  
2.5 to 5.5V for M93Sx6-W  
1.8 to 5.5V for M93Sx6-R  
8
Single Organization: by Word (x16)  
Programming Instructions that work on: Word  
or Entire Memory  
1
Self-timed Programming Cycle with Auto-  
Erase  
PDIP8 (BN)  
User Defined Write Protected Area  
Page Write Mode (4 words)  
Ready/Busy Signal During Programming  
Speed:  
8
1MHz Clock Rate, 10ms Write Time  
(Current product, identified by process  
identification letter F or M)  
1
SO8 (MN)  
150 mil width  
2MHz Clock Rate, 5ms Write Time (New  
Product, identified by process  
identification letter W or G)  
Sequential Read Operation  
Enhanced ESD/Latch-Up Behavior  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
TSSOP8 (DS)  
3x3mm body size  
TSSOP8 (DW)  
169 mil width  
April 2004  
1/34  

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