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M93S46-DS3 PDF预览

M93S46-DS3

更新时间: 2024-11-18 22:22:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
34页 526K
描述
4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection

M93S46-DS3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:3 X 3 MM, TSSOP-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.84最大时钟频率 (fCLK):2 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:S-PDSO-G8JESD-609代码:e0
长度:3 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:64 words字数代码:64
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:64X16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.19封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:1.1 mm
串行总线类型:MICROWIRE最大待机电流:0.000015 A
子类别:EEPROMs最大压摆率:0.002 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M93S46-DS3 数据手册

 浏览型号M93S46-DS3的Datasheet PDF文件第2页浏览型号M93S46-DS3的Datasheet PDF文件第3页浏览型号M93S46-DS3的Datasheet PDF文件第4页浏览型号M93S46-DS3的Datasheet PDF文件第5页浏览型号M93S46-DS3的Datasheet PDF文件第6页浏览型号M93S46-DS3的Datasheet PDF文件第7页 
M93S66, M93S56  
M93S46  
4Kbit, 2Kbit and 1Kbit (16-bit wide)  
MICROWIRE Serial Access EEPROM with Block Protection  
FEATURES SUMMARY  
Industry Standard MICROWIRE Bus  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M93Sx6  
2.5 to 5.5V for M93Sx6-W  
1.8 to 5.5V for M93Sx6-R  
8
Single Organization: by Word (x16)  
Programming Instructions that work on: Word  
or Entire Memory  
1
Self-timed Programming Cycle with Auto-  
Erase  
PDIP8 (BN)  
User Defined Write Protected Area  
Page Write Mode (4 words)  
Ready/Busy Signal During Programming  
Speed:  
8
1MHz Clock Rate, 10ms Write Time  
(Current product, identified by process  
identification letter F or M)  
1
SO8 (MN)  
150 mil width  
2MHz Clock Rate, 5ms Write Time (New  
Product, identified by process  
identification letter W or G)  
Sequential Read Operation  
Enhanced ESD/Latch-Up Behavior  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
TSSOP8 (DS)  
3x3mm body size  
TSSOP8 (DW)  
169 mil width  
April 2004  
1/34  

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4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection