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M93S46-BN3G/W PDF预览

M93S46-BN3G/W

更新时间: 2024-11-19 13:10:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
34页 526K
描述
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M93S46-BN3G/W 数据手册

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M93S66, M93S56  
M93S46  
4Kbit, 2Kbit and 1Kbit (16-bit wide)  
MICROWIRE Serial Access EEPROM with Block Protection  
FEATURES SUMMARY  
Industry Standard MICROWIRE Bus  
Figure 1. Packages  
Single Supply Voltage:  
4.5 to 5.5V for M93Sx6  
2.5 to 5.5V for M93Sx6-W  
1.8 to 5.5V for M93Sx6-R  
8
Single Organization: by Word (x16)  
Programming Instructions that work on: Word  
or Entire Memory  
1
Self-timed Programming Cycle with Auto-  
Erase  
PDIP8 (BN)  
User Defined Write Protected Area  
Page Write Mode (4 words)  
Ready/Busy Signal During Programming  
Speed:  
8
1MHz Clock Rate, 10ms Write Time  
(Current product, identified by process  
identification letter F or M)  
1
SO8 (MN)  
150 mil width  
2MHz Clock Rate, 5ms Write Time (New  
Product, identified by process  
identification letter W or G)  
Sequential Read Operation  
Enhanced ESD/Latch-Up Behavior  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
TSSOP8 (DS)  
3x3mm body size  
TSSOP8 (DW)  
169 mil width  
April 2004  
1/34  

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