Datasheet > 存储 > EEPROM> M93C56-BN6TG/W

M93C56-BN6TG/W

更新时间： 2024-12-01 05:00:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
38页	353K
描述
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE㈢ serial access EEPROM

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中文翻译

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数据手册

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M93C56-BN6TG/W 数据手册

M93C86, M93C76, M93C66

M93C56, M93C46

16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide)

MICROWIRE® serial access EEPROM

Features

●

Industry standard MICROWIRE bus

Single supply voltage:

–

4.5 V to 5.5 V for M93Cx6

2.5 V to 5.5 V for M93Cx6-W

1.8 V to 5.5 V for M93Cx6-R

PDIP8 (BN)

●

Dual organization: by word (x16) or byte (x8)

Programming instructions that work on: byte,

word or entire memory

●

Self-timed programming cycle with auto-

erase: 5 ms

●

READY/BUSY signal during programming

2 MHz clock rate

SO8 (MN)

150 mil width

Sequential read operation

Enhanced ESD/latch-up behavior

More than 1 million write cycles

More than 40 year data retention

Packages

TSSOP8 (DW)

169 mil width

–

ECOPACK® (RoHS compliant)

Table 1.

Reference

Product list

Part

number

UFDFPN8 (MB)

2 x 3 mm (MLP)

Reference

number

M93C86

M93C56

M93C86 M93C86-W

M93C86-R

M93C56 M93C56-W

M93C56-R

M93C66

M93C46

M93C66 M93C66-W

M93C66-R

M93C46 M93C46-W

M93C46-R

M93C76

M93C76-W

July 2007

Rev 7

1/38

www.st.com

12 3 4 5 6 7...38

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