Datasheet > M93C46RMF8G/K

M93C46RMF8G/K

更新时间： 2024-09-30 09:36:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
32页	1083K
描述
EEPROM

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中文翻译

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数据手册

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M93C46RMF8G/K 数据手册

M93Cx6-DRE

16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide)

MICROWIRE™ serial EEPROM 105 °C operation

Datasheet - production data

Features

• Industry standard MICROWIRE™ bus

• Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb

• Dual organization: by word (x16) or byte (x8)

• Write

SO8 (MN)

150 mil width

– Byte within 4 ms

– Word within 4 ms

• READY/BUSY signal during programming

• 2 MHz clock rate

• Sequential read operation

• Single supply voltage: 1.7 V to 5.5 V

TSSOP8 (DW)

169 mil width

• Extended temperature range: -40 °C up to 105

°C

• Enhanced ESD protection

• Write cycle endurance

– 4 million Write cycles at 25 °C

– 1.2 million Write cycles at 85 °C

– 900 k Write cycle at 105°C

WFDFPN8 (MF)

DFN8 - 2 x 3 mm

• Data retention

– more than 50 years at 105 °C

– 200 years at 55 °C

• Packages

– RoHS-compliant and Halogen-free

(ECOPACK2®)

Table 1. Device summary

Reference

Part number

M93C46-DRE

M93C56-DRE

M93C66-DRE

M93C76-DRE

M93C86-DRE

M93Cx6-DRE

February 2017

DocID028496 Rev 2

1/32

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...32

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