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M93C46-RMN3TG/K PDF预览

M93C46-RMN3TG/K

更新时间: 2024-11-16 12:58:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
37页 332K
描述
MICROWIRE BUS SERIAL EEPROM

M93C46-RMN3TG/K 技术参数

生命周期:Active包装说明:SOP-8
Reach Compliance Code:compliantHTS代码:8542.32.00.51
风险等级:5.69Is Samacsys:N
备用内存宽度:8最大时钟频率 (fCLK):2 MHz
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:16功能数量:1
端子数量:8字数:64 words
字数代码:64工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:64X16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
筛选级别:AEC-Q100座面最大高度:1.75 mm
串行总线类型:MICROWIRE最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mm最长写入周期时间 (tWC):4 ms
Base Number Matches:1

M93C46-RMN3TG/K 数据手册

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M93C86, M93C76, M93C66  
M93C56, M93C46  
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide)  
MICROWIRE® serial access EEPROM  
Features  
Industry standard MICROWIRE bus  
Single supply voltage:  
4.5 V to 5.5 V for M93Cx6  
2.5 V to 5.5 V for M93Cx6-W  
1.8 V to 5.5 V for M93Cx6-R  
Dual organization: by word (x16) or byte (x8)  
PDIP8 (BN)  
Programming instructions that work on: byte,  
word or entire memory  
Self-timed programming cycle with auto-  
erase: 5 ms  
READY/BUSY signal during programming  
2 MHz clock rate  
Sequential read operation  
Enhanced ESD/latch-up behavior  
More than 1 million write cycles  
More than 40 year data retention  
Packages  
SO8 (MN)  
150 mil width  
ECOPACK® (RoHS compliant)  
TSSOP8 (DW)  
169 mil width  
Table 1.  
Reference  
Product list  
Part  
Part  
Reference  
number  
number  
M93C86  
M93C56  
UFDFPN8 (MB)  
2 x 3 mm (MLP)  
M93C86 M93C86-W  
M93C86-R  
M93C56 M93C56-W  
M93C56-R  
M93C66  
M93C46  
M93C66 M93C66-W  
M93C66-R  
M93C46 M93C46-W  
M93C46-R  
M93C76  
M93C76 M93C76-W  
M93C76-R  
January 2008  
Rev 8  
1/37  
www.st.com  
1

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