M74HC670M1

更新时间： 2024-11-29 13:10:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		存储内存集成电路静态存储器光电二极管
页数	文件大小	规格书
12页	266K
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中文翻译

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数据手册

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M74HC670M1 数据手册

M54HC670

M74HC670

4 WORD X 4 BIT REGISTER FILE (3 STATE)

HIGH SPEED

t_PD= 23 ns (TYP.) AT V_CC= 5 V

LOW POWER DISSIPATION

I_CC= 4 µA (MAX.) AT T_A= 25 °C

HIGH NOISE IMMUNITY

V_NIH= V_NIL= 28 % V_CC(MIN.)

OUTPUT DRIVE CAPABILITY

10 LSTTL LOADS

SYMMETRICAL OUTPUT IMPEDANCE

|I_OH| = I_OL= 4 mA (MIN.)

BALANCED PROPAGATION DELAYS

t_PLH= t_PHL

WIDE OPERATING VOLTAGE RANGE

B1R

(Plastic Package)

F1R

(Ceramic Package)

M1R

(Micro Package)

C1R

(Chip Carrier)

V_CC(OPR) = 2 V TO 6 V

PIN AND FUNCTION COMPATIBLE

WITH 54/74LS670

ORDER CODES :

M54HC670F1R

M74HC670B1R

M74HC670M1R

M74HC670C1R

PIN CONNECTIONS (top view)

DESCRIPTION

The M54/74HC670 is a high speed CMOS 4 WORD

X 4 BIT REGISTER FILE (3-STATE) fabricated in

silicon gate C²MOS technology. It has the same

high speed performance of LSTTL combined with

true CMOS low power consumption. The

M54HC/74HC670 is a 4 x 4 Register File organized

as four words by four bits. Separate read and write

inputs, both address and enable, allow simulta-

neous read and write operation. The 3-state outputs

make it possible to connect up to 128 outputs to in-

crease theword capacity up to 512 words. Anynum-

ber of these devices can be operated in parallel to

generate an n-bitlength. Allinputs areequipped with

protection circuits against static discharge and tran-

sient excess voltage.

NC =

No Internal

Connection

October 1992

1/12

12 3 4 5 6 7...12

中文翻译

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