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M74HC365YRM13TR PDF预览

M74HC365YRM13TR

更新时间: 2024-11-26 17:33:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
11页 233K
描述
六路总线缓冲器(3态)

M74HC365YRM13TR 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOIC包装说明:SOP,
针数:16Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.68
系列:HC/UHJESD-30 代码:R-PDSO-G16
长度:9.9 mm逻辑集成电路类型:BUS DRIVER
位数:6功能数量:1
端口数量:2端子数量:16
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED传播延迟(tpd):130 ns
筛选级别:AEC-Q100座面最大高度:1.75 mm
最大供电电压 (Vsup):6 V最小供电电压 (Vsup):2 V
标称供电电压 (Vsup):4.5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

M74HC365YRM13TR 数据手册

 浏览型号M74HC365YRM13TR的Datasheet PDF文件第2页浏览型号M74HC365YRM13TR的Datasheet PDF文件第3页浏览型号M74HC365YRM13TR的Datasheet PDF文件第4页浏览型号M74HC365YRM13TR的Datasheet PDF文件第5页浏览型号M74HC365YRM13TR的Datasheet PDF文件第6页浏览型号M74HC365YRM13TR的Datasheet PDF文件第7页 
M54HC365  
RAD-HARD HEX BUS BUFFER  
WITH 3 STATE OUTPUTS (NON INVERTING)  
HIGH SPEED:  
= 10ns (TYP.) at V  
t
= 6V  
CC  
PD  
LOW POWER DISSIPATION:  
= 4µA(MAX.) at T =25°C  
I
CC  
A
HIGH NOISE IMMUNITY:  
= V = 28% V (MIN.)  
V
NIH  
NIL  
CC  
DILC-16  
FPC-16  
SYMMETRICAL OUTPUT IMPEDANCE:  
|I | = I = 6mA (MIN)  
OH  
OL  
BALANCED PROPAGATION DELAYS:  
t
t
ORDER CODES  
PACKAGE  
PLH  
PHL  
WIDE OPERATING VOLTAGE RANGE:  
(OPR) = 2V to 6V  
FM  
EM  
V
CC  
DILC  
FPC  
M54HC365D  
M54HC365K  
M54HC365D1  
M54HC365K1  
PIN AND FUNCTION COMPATIBLE WITH  
54 SERIES 365  
SPACE GRADE-1: ESA SCC QUALIFIED  
50 krad QUALIFIED, 100 krad AVAILABLE ON  
REQUEST  
NO SEL UNDER HIGH LET HEAVY IONS  
IRRADIATION  
All six buffers are controlled by the combination of  
two enable inputs (G1 and G2); all outputs of  
these buffers are enabled only when both G1 and  
G2 inputs are held low, under all other conditions  
these outputs are disabled in a high-impedance  
state.  
DEVICE FULLY COMPLIANT WITH  
SCC-9401-052  
The M54HC365 has non inverting outputs.  
All inputs are equipped with protection circuits  
against static discharge and transient excess  
voltage.  
DESCRIPTION  
The 54HC365 is an advanced high-speed CMOS  
HEX BUS BUFFER (3-STATE) fabricated with  
2
silicon gate C MOS technology.  
PIN CONNECTION  
Rev. 1  
1/11  
May 2004  

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