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M74HC133RM13TR PDF预览

M74HC133RM13TR

更新时间: 2024-11-26 02:59:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发器逻辑集成电路光电二极管输入元件
页数 文件大小 规格书
9页 182K
描述
13 INPUT NAND GATE

M74HC133RM13TR 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP-16针数:16
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.5Is Samacsys:N
系列:HC/UHJESD-30 代码:R-PDSO-G16
JESD-609代码:e4长度:9.9 mm
负载电容(CL):50 pF逻辑集成电路类型:NAND GATE
最大I(ol):0.004 A湿度敏感等级:3
功能数量:1输入次数:13
端子数量:16最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:2/6 VProp。Delay @ Nom-Sup:39 ns
传播延迟(tpd):195 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.75 mm
子类别:Gates最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):4.5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.9 mmBase Number Matches:1

M74HC133RM13TR 数据手册

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M74HC133  
13 INPUT NAND GATE  
HIGH SPEED :  
= 14 ns (TYP.) at V = 6V  
t
PD  
CC  
LOW POWER DISSIPATION:  
=1µA(MAX.) at T =25°C  
I
CC  
A
HIGH NOISE IMMUNITY:  
= V = 28 % V (MIN.)  
V
NIH  
NIL  
CC  
DIP  
SOP  
TSSOP  
T & R  
SYMMETRICAL OUTPUT IMPEDANCE:  
|I | = I = 4mA (MIN)  
OH  
OL  
BALANCED PROPAGATION DELAYS:  
t
t
ORDER CODES  
PACKAGE  
PLH  
PHL  
WIDE OPERATING VOLTAGE RANGE:  
(OPR) = 2V to 6V  
TUBE  
V
CC  
DIP  
SOP  
M74HC133B1R  
M74HC133M1R  
PIN AND FUNCTION COMPATIBLE WITH  
74 SERIES 133  
M74HC133RM13TR  
M74HC133TTR  
TSSOP  
DESCRIPTION  
The M74HC133 is an high speed CMOS  
13-INPUT NAND GATE fabricated with silicon  
gate C MOS technology.  
All inputs are equipped with protection circuits  
against static discharge and transient excess  
voltage.  
2
The internal circuit is composed of 7 stages  
including buffer output, which enables high noise  
immunity and stable output.  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
July 2001  
1/9  

M74HC133RM13TR 替代型号

型号 品牌 替代类型 描述 数据表
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13 INPUT NAND GATE

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