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M69AB048BD70ZA8T PDF预览

M69AB048BD70ZA8T

更新时间: 2024-01-31 11:14:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 内存集成电路
页数 文件大小 规格书
64页 652K
描述
2MX16 PSEUDO STATIC RAM, 70ns, BGA71, 7 X 11 MM, 0.80 MM PITCH, FBGA-71

M69AB048BD70ZA8T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:7 X 11 MM, 0.80 MM PITCH, FBGA-71针数:71
Reach Compliance Code:not_compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.92
最长访问时间:70 ns其他特性:SYNCHRONOUS BURST MODE ALSO POSSIBLE
I/O 类型:COMMONJESD-30 代码:R-XBGA-B71
JESD-609代码:e0长度:11 mm
内存密度:33554432 bit内存集成电路类型:PSEUDO STATIC RAM
内存宽度:16功能数量:1
端子数量:71字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-30 °C
组织:2MX16输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:TFBGA
封装等效代码:BGA71,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00001 A子类别:Other Memory ICs
最大压摆率:0.03 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:TIN LEAD
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7 mmBase Number Matches:1

M69AB048BD70ZA8T 数据手册

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M69KB048BD  
M69AB048BD  
32 Mbit (2 Mb x16) 1.8 V supply, burst PSRAMs  
Features  
FBGA  
Asynchronous SRAM interface  
Fast access time: 70 ns  
Asynchronous page read  
– Page size: 8 words  
FBGA71 (ZA)  
7 x 11mm  
– First access within page: 70 ns  
– Subsequent read within page: 20 ns  
Synchronous burst read/write capability  
– Fixed length (8, or 16 words) or  
continuous mode  
– Output delay: 8 ns max  
– Burst read/write mode: fixed length (8 or 16  
words) or continuous  
Low voltage operating condition  
– V = 1.7 to 1.95 V  
CC  
Byte control by UB and LB  
Low power consumption  
– Active current: 30 mA  
– Standby current: 100 µA  
Wafer  
Three power-down modes  
– Deep power-down  
– Partial array refresh of 4 Mbits  
– Partial array refresh of 8 Mbits  
Wide operating temperature  
– –30 to +85°C  
®
ECOPACK FBGA71 package available  
December 2007  
Rev 2  
1/64  
www.st.com  
1

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