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M68757H PDF预览

M68757H

更新时间: 2024-11-08 22:46:35
品牌 Logo 应用领域
三菱 - MITSUBISHI 放大器功率放大器
页数 文件大小 规格书
3页 32K
描述
SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO

M68757H 数据手册

 浏览型号M68757H的Datasheet PDF文件第2页浏览型号M68757H的Datasheet PDF文件第3页 
MITSUBISHI RF POWER MODULE  
M68757H  
SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO  
Dimensions in mm  
OUTLINE DRAWING  
BLOCK DIAGRAM  
30±0.2  
2
3
26.6±0.2  
21.2±0.2  
2-R1.5±0.1  
1
4
5
5
1
2
3
4
0.45  
6±1  
13.7±1  
18.8±1  
23.9±1  
PIN:  
1
2
3
4
5
Pin : RF INPUT  
VGG : GATE BIAS SUPPLY  
VDD : DRAIN BIAS SUPPLY  
PO : RF OUTPUT  
GND: FIN  
H46  
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)  
Symbol  
VDD  
Parameter  
Conditions  
Ratings  
Unit  
V
Supply voltage  
Gate bias voltage  
Input power  
VGG£3.5V, ZG=ZL=50W  
9.2  
4
VGG  
V
Pin  
f=896-941MHz, ZG=ZL=50W  
f=896-941MHz, ZG=ZL=50W  
f=896-941MHz, ZG=ZL=50W  
70  
5
mW  
W
PO  
Output power  
TC (OP)  
Tstg  
Operation case temperature  
Storage temperature  
-30 to +100  
-40 to +100  
°C  
°C  
Note. Above parameters are guaranteed independently.  
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Wunless otherwise noted)  
Limits  
Symbol  
Parameter  
Test conditions  
-
Unit  
Min  
Max  
941  
f
Frequency range  
Output power  
Total efficiency  
2nd. harmonic  
Input VSWR  
896  
3
MHz  
W
PO  
hT  
30  
%
VDD=7.2V, VGG=3.5V, Pin=50mW  
2fO  
r in  
-28  
4
dBc  
ZG=ZL=50W, VDD=5-9.2V,  
Load VSWR <4:1  
No parasitic oscillation  
Stability  
VDD=9V, Pin=50mW,  
PO=3W (VGG Adjust), ZL=20:1  
No degradation or  
destroy  
Load VSWR tolerance  
Note. Above parameters, ratings, limits and test conditions are subject to change.  
Nov. ´97  

M68757H 替代型号

型号 品牌 替代类型 描述 数据表
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