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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| M65KA128AE8W5 | STMICROELECTRONICS |
获取价格 |
8MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER |
|
| M65KA128AL | STMICROELECTRONICS |
获取价格 |
128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs |
|
| M65KA128AL10W5 | STMICROELECTRONICS |
获取价格 |
128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs |
|
| M65KA256AF8W8 | STMICROELECTRONICS |
获取价格 |
16MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER |
|
| M65KA256AL10W8 | STMICROELECTRONICS |
获取价格 |
16MX16 SYNCHRONOUS DRAM, 7ns, UUC, WAFER |
|
| M65KA512AB | STMICROELECTRONICS |
获取价格 |
512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM |
|
| M65KA512AB83 | STMICROELECTRONICS |
获取价格 |
IC,SDRAM,4X8MX16,CMOS,DIE |
|
| M65KA512AB83T | STMICROELECTRONICS |
获取价格 |
32MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER |
|
| M65KA512AB8W | STMICROELECTRONICS |
获取价格 |
32MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER |
|
| M65KA512AB8W3 | STMICROELECTRONICS |
获取价格 |
512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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