生命周期: | Active | 零件包装代码: | BGA |
包装说明: | BGA, BGA209,11X19,40 | 针数: | 209 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.67 |
Is Samacsys: | N | 最长访问时间: | 2.8 ns |
其他特性: | PIPELINED ARCHITECTURE | 最大时钟频率 (fCLK): | 225 MHz |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B209 |
长度: | 22 mm | 内存密度: | 18874368 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 72 |
功能数量: | 1 | 端子数量: | 209 |
字数: | 262144 words | 字数代码: | 256000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 256KX72 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装等效代码: | BGA209,11X19,40 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 电源: | 2.5 V |
认证状态: | Not Qualified | 座面最大高度: | 2.2 mm |
最大待机电流: | 0.03 A | 最小待机电流: | 2.38 V |
子类别: | SRAMs | 最大压摆率: | 0.5 mA |
最大供电电压 (Vsup): | 2.625 V | 最小供电电压 (Vsup): | 2.375 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M5M5T5672TG-25 | RENESAS |
获取价格 |
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM | |
M5M5V1004CJ-20T | MITSUBISHI |
获取价格 |
Standard SRAM, 256KX4, 20ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28 | |
M5M5V108CFP-10H | MITSUBISHI |
获取价格 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM | |
M5M5V108CFP-10HI | MITSUBISHI |
获取价格 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM | |
M5M5V108CFP-10X | MITSUBISHI |
获取价格 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM | |
M5M5V108CFP-10XI | MITSUBISHI |
获取价格 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM | |
M5M5V108CFP-70H | MITSUBISHI |
获取价格 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM | |
M5M5V108CFP-70HI | MITSUBISHI |
获取价格 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM | |
M5M5V108CFP-70X | MITSUBISHI |
获取价格 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM | |
M5M5V108CFP-70XI | MITSUBISHI |
获取价格 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |