Datasheet > 存储 > SRAM> M5M5408AFP-70L-I

M5M5408AFP-70L-I

更新时间： 2024-09-14 09:50:43

品牌	Logo	应用领域
三菱 - MITSUBISHI		静态存储器光电二极管
页数	文件大小	规格书
7页	42K
描述
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32

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M5M5408AFP-70L-I 数据手册

MITSUBISHI LSIs

M5M5408AFP,TP,RT-70L-I,-70LL-I,

-10L-I,-10LL-I

4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION

PIN CONFIGURATION (TOP VIEW)

The M5M5408A is 4,194,304-bit CMOS static RAM organized as

524,288-words by 8-bit, fabricated using high-performance

quadruple-polysilicon and double metal CMOS technology.

₃₂VCC(5V)

A18

A16

A14

A12

A2 10

A0 12

DQ1 13

The use of thin film transistor (TFT) load cells and CMOS periphery

A15

results in a high density and low power static RAM.

The

30 A17

M5M5408A is designed for memory applications where the high

performance, high reliability, large storage, simple interfacing and

battery back-up are important design objectives.

The M5M5408A is offered in a 32-pin plastic small outline

package (SOP) and a 32-pin thin small outline package (TSOP),

providing high board level packing densities. Two types of TSOP

packages are available, M5M5408ATP(normal lead bend type

package) and M5M5408ART (reverse lead bend type package).

Using both two types makes it easy to design a printed circuit

board.

A13

27 A8

26 A9

A11

23 A10

21 DQ8

20 DQ7

DQ2

DQ6

FEATURES

DQ3 15

(0V)GND 16

18 DQ5

17 DQ4

Access

time

Power supply current

Type

Active

(max)

Stand-by

(max)

Outline 32P2M-A(FP)

32P3Y-H(TP)

(max)

M5M5408AFP,TP,RT-70L-I

M5M5408AFP,TP,RT-10L-I

70ns

100ns

200µA

(Vcc=5.5v)

90mA

(Vcc=5.5V)

(5V)VCC

1 A18

A15 31

A17 30

2 A16

3 A14

4 A12

40µA

(Vcc=5.5v)

M5M5408AFP,TP,RT-70LL-I 70ns

M5M5408AFP,TP,RT-10LL-I 100ns

A13 28

A8 27

A9 26

A11 25

• Single +5V power supply

• No clocks, No refresh

• All inputs and outputs are TTL compatible.

• Easy memory expansion and power down by S

• Data retention supply voltage=+2.0V

• Three-state outputs: OR-tie capability

• OE prevents data contention in the I/O bus

• Common Data I/O

A10 23

DQ8 21

DQ7 20

10 A2

12 A0

13 DQ1

• Small stand-by current………………0.4µA(typ.)

• Package

DQ6

DQ2

DQ5 18

DQ4 17

15 DQ3

16 GND(0V)

M5M5408AFP : 32 pin 525 mil SOP

M5M5408ATP : 32 pin 400 mil TSOP(II)

M5M5408ART : 32 pin 400 mil TSOP(II)

Outline 32P3Y-J(RT)

APPLICATION

Small capacity memory units, IC card, Battery operating system,

asynchronous server system

MITSUBISHI

ELECTRIC

12 3 4 5 6 7

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与M5M5408AFP-70L-I相关器件

型号	品牌	获取价格	描述	数据表
M5M5408AFP-70LL	MITSUBISHI	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32
M5M5408AFP-70LT	MITSUBISHI	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.525 INCH, 1.27 MM PITCH, PLASTIC, SOP-32
M5M5408AFP-85VL	MITSUBISHI	获取价格	Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.525 INCH, 1.27 MM PITCH, PLASTIC, SOP-32
M5M5408AFP-85VLL	MITSUBISHI	获取价格	Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.525 INCH, 1.27 MM PITCH, PLASTIC, SOP-32
M5M5408AFP-85VLLT	MITSUBISHI	获取价格	Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.525 INCH, 1.27 MM PITCH, PLASTIC, SOP-32
M5M5408AFP-85VLT	MITSUBISHI	获取价格	Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.525 INCH, 1.27 MM PITCH, PLASTIC, SOP-32
M5M5408ART-10L-I	MITSUBISHI	获取价格	Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32
M5M5408ART-10LT	MITSUBISHI	获取价格	Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, REVERSE, T
M5M5408ART-10VL	MITSUBISHI	获取价格	Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, REVERSE, T
M5M5408ART-15VL	MITSUBISHI	获取价格	Standard SRAM, 512KX8, 150ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, TSOP2-32

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