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M5M5256DVP-85VLLT PDF预览

M5M5256DVP-85VLLT

更新时间: 2024-11-25 13:10:07
品牌 Logo 应用领域
三菱 - MITSUBISHI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
7页 65K
描述
Standard SRAM, 32KX8, 85ns, MIXMOS, PDSO28, 8 X 13.40 MM, PLASTIC, TSOP1-28

M5M5256DVP-85VLLT 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:SOP,针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.75
最长访问时间:85 nsJESD-30 代码:R-PDSO-G28
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端口数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
最小待机电流:2 V最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:MIXMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子位置:DUALBase Number Matches:1

M5M5256DVP-85VLLT 数据手册

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'97.4.7  
MITSUBISHI LSIs  
M5M5256DFP,VP,RV -70VLL,-85VLL,  
-70VXL,-85VXL  
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM  
DESCRIPTION  
PIN CONFIGURATION (TOP VIEW)  
The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs  
organized as 32,768-words by 8-bits which is fabricated using  
high-performance 3 polysilicon CMOS technology. The use of  
resistive load NMOS cells and CMOS periphery results in a high  
density and low power static RAM. Stand-by current is small  
enough for battery back-up application. It is ideal for the memory  
systems which require simple interface.  
A14  
A12  
Vcc  
/W  
28  
27  
26  
25  
1
2
3
A7  
A6  
A5  
A4  
A13  
A8  
4
24 A9  
5
Especially the M5M5256DVP,RV are packaged in a 28-pin thin  
small outline package.Two types of devices are available,  
M5M5256DVP(normal lead bend type package),  
M5M5256DRV(reverse lead bend type package). Using both types of  
devices, it becomes very easy to design a printed circuit board.  
A11  
23  
6
22 /OE  
7
A3  
21  
20  
19  
A2  
A1  
A0  
DQ1  
DQ2  
8
9
A10  
/S  
DQ8  
10  
11  
12  
18 DQ7  
DQ6  
DQ5  
17  
16  
15  
FEATURE  
DQ3 13  
GND  
14  
Power supply current  
Active Stand-by  
Access  
time  
DQ4  
Type  
Outline 28P2W-C (DFP)  
(max)  
70ns  
85ns  
(max)  
(max)  
M5M5256DFP,VP,RV-70VLL  
M5M5256DFP,VP,RV-85VLL  
A10  
21  
20  
19  
22  
23  
24A9  
25A8  
26A13  
/OE  
A11  
12µA  
(Vcc=3.6V)  
/S  
DQ8  
DQ7 18  
DQ6 17  
DQ5 16  
DQ415  
25mA  
(Vcc=3.6V)  
2.4µA  
(Vcc=3.6V)  
M5M5256DFP,VP,RV-70VXL  
M5M5256DFP,VP,RV-85VXL  
70ns  
85ns  
27  
28Vcc  
/W  
0.05µA  
(Vcc=3.0V,  
Typical)  
1
2
14  
DQ313  
A14  
A12  
M5M5256DVP  
GND  
12  
11  
10  
9
A7  
DQ2  
DQ1  
A0  
3
•Single +3.3±0.3V power supply  
•No clocks, no refresh  
•Data-Hold on +2.0V power supply  
•Directly TTL compatible : all inputs and outputs  
•Three-state outputs : OR-tie capability  
•/OE prevents data contention in the I/O bus  
•Common Data I/O  
4 A6  
5 A5  
6 A4  
7 A3  
A1  
A2 8  
Outline 28P2C-A (DVP)  
•Battery backup capability  
•Low stand-by current··········0.05µA(typ.)  
A2  
A1  
A0  
A3  
A4  
A5  
8
9
10  
7
6
5
4 A6  
DQ111  
DQ2  
DQ3  
GND  
DQ4  
DQ5  
DQ6  
3 A7  
2 A12  
1 A14  
12  
13  
PACKAGE  
M5M5256DFP  
M5M5256DVP,RV : 28pin 8 X 13.4 mm TSOP  
: 28 pin 450 mil SOP  
14  
15  
16  
17  
18  
19  
2
M5M5256DRV  
Vcc  
28  
27 /W  
26 A13  
25 A8  
DQ7  
DQ8  
/S 20  
A10  
APPLICATION  
A9  
A11  
/OE  
24  
23  
22  
Small capacity memory units  
21  
Outline 28P2C-B (DRV)  
MITSUBISHI  
ELECTRIC  
1

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