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M5M51008CKR-70H PDF预览

M5M51008CKR-70H

更新时间: 2024-01-11 02:17:49
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
7页 90K
描述
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

M5M51008CKR-70H 数据手册

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MITSUBISHI LSIs  
M5M51008CP,FP,VP,RV,KV,KR -55H, -70H,  
-55X, -70X  
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM  
DESCRIPTION  
PIN CONFIGURATION (TOP VIEW)  
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS  
static RAM organized as 131072 word by 8-bit which are  
fabricated using high-performance quadruple-polysilicon and  
double metal CMOS technology. The use of thin film transistor  
(TFT) load cells and CMOS periphery result in a high density and  
low power static RAM.  
NC  
A16  
A14  
A12  
A7  
1
2
32  
31  
30  
29  
VCC  
A15  
S2  
ADDRESS  
INPUT  
CHIP SELECT  
INPUT  
WRITE CONTROL  
INPUT  
3
4
W
They are low standby current and low operation current and ideal  
for the battery back-up application.  
5
28 A13  
27  
A6  
6
A8  
ADDRESS  
INPUTS  
The M5M51008CVP,RV,KV,KR are packaged in a 32-pin thin  
small outline package which is a high reliability and high density  
surface mount device(SMD). Two types of devices are available.  
M5M51008CVP,KV(normal lead bend type package),  
M5M51008CRV,KR(reverse lead bend type package).Using both  
types of devices, it becomes very easy to design a printed circuit  
board.  
ADDRESS  
INPUTS  
A5  
7
26 A9  
A4  
8
25 A11  
OUTPUT ENABLE  
A3  
9
24 OE INPUT  
ADDRESS  
INPUT  
CHIP SELECT  
INPUT  
A2  
10  
11  
12  
23 A10  
A1  
22  
S1  
A0  
21  
20  
DQ8  
DQ7  
DQ1 13  
DQ2  
DATA  
INPUTS/  
DATA  
INPUTS/  
OUTPUTS  
14  
19 DQ6  
FEATURES  
OUTPUTS  
DQ3 15  
GND16  
18  
DQ5  
DQ4  
Power supply current  
Access  
17  
Active  
(1MHz)  
(max)  
Type name  
time  
stand-by  
(max)  
(max)  
Outline 32P4(P), 32P2M-A(FP)  
M5M51008CP,FP,VP,RV,KV,KR-55H  
M5M51008CP,FP,VP,RV,KV,KR-70H  
M5M51008CP,FP,VP,RV,KV,KR-55X  
M5M51008CP,FP,VP,RV,KV,KR-70X  
55ns  
70ns  
55ns  
70ns  
20µA  
A11  
A9  
1
2
3
4
5
6
7
8
9
32  
31  
30  
OE  
A10  
S1  
(Vcc=5.5V)  
15mA  
(1MHz)  
8µA  
(Vcc=5.5V)  
0.1µA  
A8  
A13  
W
29 DQ8  
(Vcc=3.0V typ)  
28  
DQ7  
27  
S2  
DQ6  
Low stand-by current 0.1µA (typ.)  
A15  
VCC  
NC  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
DQ5  
DQ4  
GND  
DQ3  
DQ2  
DQ1  
A0  
Directly TTL compatible : All inputs and outputs  
Easy memory expansion and power down by S1,S2  
Data hold on +2V power supply  
Three-state outputs : OR - tie capability  
OE prevents data contention in the I/O bus  
Common data I/O  
M5M51008CVP,KV  
A16 10  
A14  
11  
Package  
A12  
12  
M5M51008CP  
M5M51008CFP  
···········3· 2pin 600mil DIP  
···········3· 2pin 525mil SOP  
A7  
13  
A6  
14  
A1  
M5M51008CVP,RV ···········3· 2pin 8 X 20 mm2 TSOP  
M5M51008CKV,KR ···········3· 2pin 8 X 13.4 mm 2 TSOP  
15  
A5  
A4  
A2  
16  
A3  
APPLICATION  
Small capacity memory units  
Outline 32P3H-E(VP), 32P3K-B(KV)  
A4  
17  
16  
15  
14  
13  
12  
11  
10  
9
A3  
A5  
18 A2  
A6  
19 A1  
A7  
20 A0  
A12  
A14  
A16  
NC  
VCC  
A15  
S2  
21 DQ1  
22  
DQ2  
23  
DQ3  
24  
GND  
M5M51008CRV,KR  
8
25  
DQ4  
7
26  
27  
28  
29  
30  
31  
32  
DQ5  
DQ6  
DQ7  
DQ8  
S1  
6
5
W
A13  
A8  
4
3
2
A9  
A10  
A11  
1
OE  
Outline 32P3H-F(RV), 32P3K-C(KR)  
NC : NO CONNECTION  
MITSUBISHI  
ELECTRIC  
1

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