Datasheet > M5M4V16169DTP-10

M5M4V16169DTP-10

更新时间： 2024-11-26 04:42:31

品牌	Logo	应用领域
三菱 - MITSUBISHI		静态存储器动态存储器
页数	文件大小	规格书
64页	731K
描述
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

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M5M4V16169DTP-10 数据手册

MITSUBISHI LSIs

M5M4V16169DTP/RT-7,-8,-10,-15

16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

Preliminary

This document is a preliminary Target Spec. and some of the contents are subject to change without notice.

PINCONFIGURATION

DESCRIPTION

(TOP VIEW)

Vss

Ad9

Ad8

Ad7

Ad11

Ad10

As9

As8

As7

As6

DQ15

Vss

DQ14

DQ13

VccQ

DQ12

Vcc

DQCl

DQCu

CC1#

CC0#

The M5M4V16169DTP/RT is a 16M-bit Cached DRAM which integrates input

registers, a 1,048,576-word by 16-bit dynamic memory array and a 1024- word

by 16-bit static RAM array as a Cache memory (block size 8x16) onto a single

monolithic circuit. The block data transfer between the DRAM and the data

transfer buffers (RB1/RB2/WB1/WB2) is performed in one instruction cycle, a

fundamental advantage over a conventional DRAM/SRAM cache.

The RAM is fabricated with a high performance CMOS process, and is ideal for

large-capacity memory systems where high speed, low power dissipation, and

low cost are essential. The use of quadruple-layer polysilicon process combined

with silicide and double layer aluminum wiring technology, a single-transistor

dynamic storage stacked capacitor cell, and a six-transistor static storage cache

cell provide high circuit density at reduced costs.

WE#

CS#

CMd#

CMs#

DQ0

Vss

DQ1

DQ2

VddQ

DQ3

400 mil

70Pin

TSOP

Type II

Vss

DQ4

VccQ

DQ5

DQ6

Vss

DQ11

VccQ

DQ10

DQ9

Vss

DQ8

MCH

As5

As4

As3

Ad6

Ad5

Ad4

Ad3

ADF#

Vss

0.65mm

Lead

Pitch

FEATURES

DQ7

MCL 25

SRAM

Access/cycle

DRAM

Access/cycle

Power

Dissipation (Typ)

Type name

As0

As1

As2

RAS#

CAS#

DTD#

Ad0

Ad1

Ad2

Vcc

DRAM: 530

SRAM: 860

5.6ns/7ns

6.4ns/8ns

8.0ns/10ns

8.0ns/15ns

M5M4V16169TP/RT-7

M5M4V16169TP/RT-8

49ns/70ns

56ns/80ns

DRAM: 500

SRAM: 800

DRAM: 430

SRAM: 660

DRAM: 330

SRAM: 420

M5M4V16169TP/RT-10

M5M4V16169TP/RT-15

60ns/90ns

Package code:70P3S-L

75ns/120ns

Vss

Ad9

Ad8

Ad7

Ad11

Ad10

As9

As8

As7

As6

DQ15

Vss

DQ14

DQ13

VccQ

DQ12

Vcc

DQCl

DQCu

CC1#

CC0#

WE#

CS#

CMd#

CMs#

DQ0

Vss

DQ1

DQ2

# 70-pin,400-mil TSOP (type II ) with 0.65mm

lead pitch and 23.49mm package length.

# Multiplexed DRAM address inputs for reduced pin

count and higher system densities.

# Selectable output operation (transparent / latched /

registered) using set command register cycle.

# Single 3.3V +/- 0.3V Power Supply.

(3.3V +/- 0.15V for -7 part)

# 2048 refresh cycles every 64ms (Ad0->Ad10).

# Programmable burst length (1,2,4,8) and burst

sequence (sequential,interleave) with no latency.

# Synchronous design for precise control with

an external clock (K).

# Output retention by advanced mask clock (CMs#).

# All inputs/outputs low capacitance and LVTTL

compatible.

# Separate DRAM and SRAM address inputs

for fast SRAM access.

: Master Clock

: Chip Select

CS#

: DRAM Clock Mask

: Row Addr. Strobe

: Column Addr. Strobe

: Data Transfer Direction

: DRAM Address

: SRAM Clock Mask

: Control Clocks

CMd#

RAS#

CAS#

DTD#

CMs#

CC0#,CC1#

WE#

DQC(u/l)

Vcc

VccQ

Vss

400 mil

70Pin

TSOP

Type II

VccQ

DQ3

Vss

: Write Enable

Vcc

: I/O Byte Control

: SRAM Address

: Output Enable

: Data I/O

: Power Supply

: DQ Power Supply

: Ground

:Address Fetch clock

This pin can be None-Connect.

:Must Connect Low

:Must Connect High

DQ4

VccQ

DQ5

DQ6

Vss

DQ7

MCL

As0

As1

As2

RAS#

CAS#

DTD#

Ad0

DQ11

VccQ

0.65mm

Lead

Pitch

DQ10 50

DQ9

Vss 48

DQ8

MCH

ADF#

G# 45

MCL

MCH

As5

As4 43

As3

Ad6

Ad5

Ad4

Ad3

ADF#

Vss

# Page Mode capability.

# Auto Refresh capability.

# Self Refresh capability.

Ad1

Ad2

Vcc

Package code:70P3S-M

MITSUBISHI ELECTRIC

(REV 1.0) Jul. 1998

12 3 4 5 6 7...64

中文翻译

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与M5M4V16169DTP-10相关器件

型号	品牌	获取价格	描述	数据表
M5M4V16169DTP-15	MITSUBISHI	获取价格	16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-7	MITSUBISHI	获取价格	16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-8	MITSUBISHI	获取价格	16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169TP-12	MITSUBISHI	获取价格	Cache DRAM, 1MX16, 56ns, CMOS, PDSO68, 0.400 INCH, 0.65 MM PITCH, TSOP2-70/68
M5M4V16169TP-12T	MITSUBISHI	获取价格	Cache DRAM, 1MX16, CMOS, PDSO68, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP2-70/68
M5M4V16169TP-15T	MITSUBISHI	获取价格	Cache DRAM, 1MX16, CMOS, PDSO68, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP2-70/68
M5M4V16169TP-20T	MITSUBISHI	获取价格	Cache DRAM, 1MX16, CMOS, PDSO68, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP2-70/68
M5M4V16400CJ-5	MITSUBISHI	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24
M5M4V16400CJ-5S	MITSUBISHI	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24
M5M4V16400CJ-5ST	MITSUBISHI	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24

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