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M5M4V16165CTP-6 PDF预览

M5M4V16165CTP-6

更新时间: 2024-11-26 21:01:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
1页 98K
描述
EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44

M5M4V16165CTP-6 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSOP44/50,.46,32针数:50
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.92
访问模式:FAST PAGE WITH EDO最长访问时间:60 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH备用内存宽度:8
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:20.95 mm
内存密度:16777216 bit内存集成电路类型:EDO DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:44
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44/50,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:1.2 mm自我刷新:NO
最大待机电流:0.0005 A子类别:DRAMs
最大压摆率:0.13 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

M5M4V16165CTP-6 数据手册

  

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