生命周期: | Obsolete | 零件包装代码: | TSOP |
包装说明: | 12 X 20 MM, PLASTIC, TSOP-48 | 针数: | 48 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.28 |
最长访问时间: | 100 ns | 启动块: | BOTTOM |
JESD-30 代码: | R-PDSO-G48 | 长度: | 18.4 mm |
内存密度: | 33554432 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 2097152 words |
字数代码: | 2000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 2MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP1 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
编程电压: | 1.8 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大供电电压 (Vsup): | 2.2 V |
最小供电电压 (Vsup): | 1.65 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
类型: | NOR TYPE | 宽度: | 12 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M59DR032F100N6 | NUMONYX |
获取价格 |
2MX16 FLASH 1.8V PROM, 100ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
M59DR032F100N6T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory | |
M59DR032F100ZB1 | NUMONYX |
获取价格 |
2MX16 FLASH 1.8V PROM, 100ns, PBGA48, 0.75 MM PITCH, FBGA-48 | |
M59DR032F100ZB1T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory | |
M59DR032F100ZB6 | STMICROELECTRONICS |
获取价格 |
2MX16 FLASH 1.8V PROM, 100ns, PBGA48, 0.75 MM PITCH, FBGA-48 | |
M59DR032F100ZB6 | NUMONYX |
获取价格 |
Flash, 2MX16, 100ns, PBGA48, 0.75 MM PITCH, FBGA-48 | |
M59DR032F100ZB6T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory | |
M59DR032F120N1T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory | |
M59DR032F120N1T | NUMONYX |
获取价格 |
Flash, 2MX16, 120ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | |
M59DR032F120N6T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |