Datasheet > M58WR064KU70ZA6F

M58WR064KU70ZA6F

更新时间： 2024-09-26 15:18:11

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
123页	2282K
描述
M58WR016KU, M58WR016KL, M58WR032KU, M58WR032KL, M58WR064KU, M58WR064KL; used in AD-mux 52-ball JX68, JX69, JXB8

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数据手册

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M58WR064KU70ZA6F 数据手册

M58WR016KU M58WR016KL M58WR032KU

M58WR032KL M58WR064KU M58WR064KL

16, 32 and 64Mb (x 16, mux I/O, multiple bank, burst)

1.8V supply flash memories

Features

Supply voltage

– V = 1.7V to 2V for program, erase and

FBGA

read

– V

= 1.7V to 2V for I/O buffers

DDQ

– V = 9V for fast program

Multiplexed address/data

VFBGA44 (ZA)

7.5 x 5mm

Synchronous/asynchronous read

– Synchronous burst read mode: 66 MHz,

80 MHz

– Random access: 70ns

Electronic signature

Synchronous burst read suspend

– Manufacturer code: 20h

Programming time

– Top device code,

M58WR016KU: 8823h

M58WR032KU: 8828h

M58WR064KU: 88C0h

– 10 µs by word typical for factory program

– Double/quadruple word program option

– Enhanced factory program options

– Bottom device code,

M58WR016KL: 8824h

M58WR032KL: 8829h

M58WR064KL: 88C1h

Memory blocks

– Multiple bank memory array: 4Mb banks

– Parameter blocks (top or bottom location)

Dual operations

RoHS compliant packages available

– Program erase in one bank while read in

others

– No delay between read and write

operations

Block locking

– All blocks locked at power up

– Any combination of blocks can be locked

– WP for block lock-down

Security

– 128 bit user programmable OTP cells

– 64 bit unique device number

Common flash interface (CFI)

100,000 program/erase cycles per block

July 2011

Rev 5

1/123

www.numonyx.com

12 3 4 5 6 7...123

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