Datasheet > 存储 > 闪存> M58WR064KU70ZA6E

M58WR064KU70ZA6E

更新时间： 2024-11-13 03:01:55

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存内存集成电路
页数	文件大小	规格书
123页	2337K
描述
16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories

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数据手册

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M58WR064KU70ZA6E 数据手册

M58WR016KU M58WR016KL M58WR032KU

M58WR032KL M58WR064KU M58WR064KL

16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst)

1.8 V supply Flash memories

Features

■ Supply voltage

– V = 1.7 V to 2 V for Program, Erase and

FBGA

Read

– V

= 1.7 V to 2 V for I/O buffers

DDQ

– V = 9 V for fast Program

■ Multiplexed address/data

VFBGA44 (ZA)

7.5 × 5 mm

■ Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 86 MHz

– Random Access: 60 ns, 70 ns

■ Synchronous Burst Read Suspend

■ Electronic signature

■ Programming time

– Manufacturer Code: 20h

– 10 µs by Word typical for Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

– Top Device Code,

M58WR016KU: 8823h

M58WR032KU: 8828h

M58WR064KU: 88C0h

– Bottom Device Code,

M58WR016KL: 8824h

M58WR032KL: 8829h

M58WR064KL: 88C1h

■ Memory blocks

– Multiple Bank memory array: 4 Mbit Banks

– Parameter Blocks (top or bottom location)

■ Dual operations

– Program Erase in one Bank while Read in

others

■ ECOPACK® packages available

– No delay between Read and Write

operations

■ Block locking

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ Security

– 128 bit user programmable OTP cells

– 64 bit unique device number

■ Common Flash Interface (CFI)

■ 100,000 program/erase cycles per block

December 2007

Rev 2

1/123

www.numonyx.com

12 3 4 5 6 7...123

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