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M58WR064KU60ZA6E PDF预览

M58WR064KU60ZA6E

更新时间: 2024-11-13 03:01:55
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路
页数 文件大小 规格书
123页 2337K
描述
16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories

M58WR064KU60ZA6E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA, BGA44,8X14,20
针数:44Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.53Is Samacsys:N
最长访问时间:60 ns其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PBGA-B44长度:7.5 mm
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,127端子数量:44
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA44,8X14,20封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH页面大小:4 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1 mm
部门规模:4K,32K最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.06 mA
最大供电电压 (Vsup):2 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:NOR TYPE
宽度:5 mmBase Number Matches:1

M58WR064KU60ZA6E 数据手册

 浏览型号M58WR064KU60ZA6E的Datasheet PDF文件第2页浏览型号M58WR064KU60ZA6E的Datasheet PDF文件第3页浏览型号M58WR064KU60ZA6E的Datasheet PDF文件第4页浏览型号M58WR064KU60ZA6E的Datasheet PDF文件第5页浏览型号M58WR064KU60ZA6E的Datasheet PDF文件第6页浏览型号M58WR064KU60ZA6E的Datasheet PDF文件第7页 
M58WR016KU M58WR016KL M58WR032KU  
M58WR032KL M58WR064KU M58WR064KL  
16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst)  
1.8 V supply Flash memories  
Features  
Supply voltage  
– V = 1.7 V to 2 V for Program, Erase and  
DD  
FBGA  
Read  
– V  
= 1.7 V to 2 V for I/O buffers  
DDQ  
– V = 9 V for fast Program  
PP  
Multiplexed address/data  
VFBGA44 (ZA)  
7.5 × 5 mm  
Synchronous / Asynchronous Read  
– Synchronous Burst Read mode: 86 MHz  
– Random Access: 60 ns, 70 ns  
Synchronous Burst Read Suspend  
Electronic signature  
Programming time  
– Manufacturer Code: 20h  
– 10 µs by Word typical for Factory Program  
– Double/Quadruple Word Program option  
– Enhanced Factory Program options  
Top Device Code,  
M58WR016KU: 8823h  
M58WR032KU: 8828h  
M58WR064KU: 88C0h  
– Bottom Device Code,  
M58WR016KL: 8824h  
M58WR032KL: 8829h  
M58WR064KL: 88C1h  
Memory blocks  
– Multiple Bank memory array: 4 Mbit Banks  
– Parameter Blocks (top or bottom location)  
Dual operations  
– Program Erase in one Bank while Read in  
others  
ECOPACK® packages available  
– No delay between Read and Write  
operations  
Block locking  
– All blocks locked at Power up  
– Any combination of blocks can be locked  
– WP for Block Lock-Down  
Security  
– 128 bit user programmable OTP cells  
– 64 bit unique device number  
Common Flash Interface (CFI)  
100,000 program/erase cycles per block  
December 2007  
Rev 2  
1/123  
www.numonyx.com  
1

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