Datasheet > M58WR064KT70ZB6F

M58WR064KT70ZB6F

更新时间： 2024-11-14 15:17:15

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
111页	3285K
描述
M58WR032KT, M58WR064KT, M58WR032KB, M58WR064KB; used in Non-Mux 88-ball JX68, JX69, JXB8

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替代型号

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M58WR064KT70ZB6F 数据手册

M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash

Features

M58WRxxxKT/B - 32Mb & 64Mb, 1.8V, x16

Multi Bank Burst, Flash

M58WR032KT, M58WR064KT,

M58WR032KB, M58WR064KB

Features

• Supply voltage

– V = 1.7V to 2V for PROGRAM, ERASE and READ

– V

= 1.7V to 2V for I/O buffers

DDQ

– V = 9V for fast program

• SYCHRONOUS/ASYCHRONOUS READ

– SYCHRONOUS BURST READ mode: 66 MHz

– Asynchronous/synchronous page READ mode

– Random access times: 70ns

• SYCHRONOUS BURST READ SUSPEND

• Programming time

– 10µs by word typical for fast factory program

– Double/quadruple word program option

– Enhanced factory program options

• Memory blocks

– Multiple bank memory array: 4Mb banks

– Parameter blocks (top or bottom location)

• Dual operations

– PROGRAM ERASE in one bank while read in others

– No delay between read and write operations

• Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked

– WP# for block lock-down

• Security

– 128 bit user programmable OTP cells

– 64 bit unique device number

• Common Flash interface (CFI)

• 100,000 PROGRAM/ERASE cycles per block

• Electronic signature

• Manufacturer code: 20h

– Device codes:

M58WR032KT (top): 8814h

M58WR032KB (bottom): 8815h

M58WR064KT (top): 8810h

M58WR064KB (bottom): 8811h

• RoHS compliant packages available

• Automotive Certified Parts Available

PDF: 09005aef848ee55b / Source: 09005aef848ee58b

M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 multi bank burst, Flash - Rev. G 10/11 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

12 3 4 5 6 7...111

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M58WR064KT70ZB6F 替代型号

型号	品牌	替代类型	描述	数据表
M58WR064KT7AZB6F	MICRON	完全替代	M58WR032KT, M58WR064KT, M58WR032KB, M58WR064KB; used in Non-Mux 88-ball JX68, JX69, JXB8
M58WR064KT7AZB6E	MICRON	类似代替	M58WR032KT, M58WR064KT, M58WR032KB, M58WR064KB; used in Non-Mux 88-ball JX68, JX69, JXB8

与M58WR064KT70ZB6F相关器件

型号	品牌	获取价格	描述	数据表
M58WR064KT7AZB6E	MICRON	获取价格	M58WR032KT, M58WR064KT, M58WR032KB, M58WR064KB; used in Non-Mux 88-ball JX68, JX69, JXB8
M58WR064KT7AZB6F	MICRON	获取价格	M58WR032KT, M58WR064KT, M58WR032KB, M58WR064KB; used in Non-Mux 88-ball JX68, JX69, JXB8
M58WR064KU	NUMONYX	获取价格	16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
M58WR064KU60ZA6E	NUMONYX	获取价格	16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
M58WR064KU60ZA6U	NUMONYX	获取价格	16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
M58WR064KU70ZA6E	NUMONYX	获取价格	16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
M58WR064KU70ZA6F	MICRON	获取价格	M58WR016KU, M58WR016KL, M58WR032KU, M58WR032KL, M58WR064KU, M58WR064KL; used in AD-mux 52-
M58WR064KU70ZA6U	NUMONYX	获取价格	16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
M58WR064T	STMICROELECTRONICS	获取价格	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory
M58WR064T100ZB6T	STMICROELECTRONICS	获取价格	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory

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