生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | 10 X 13 MM, 1 MM PITCH, TBGA-80 | 针数: | 80 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.52 |
最长访问时间: | 150 ns | 其他特性: | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE |
备用内存宽度: | 16 | JESD-30 代码: | R-PBGA-B80 |
长度: | 13 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | FLASH | 内存宽度: | 32 |
功能数量: | 1 | 端子数量: | 80 |
字数: | 2097152 words | 字数代码: | 2000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 2MX32 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE |
并行/串行: | PARALLEL | 编程电压: | 3 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 类型: | NOR TYPE |
宽度: | 10 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M58LV064B150ZA6 | NUMONYX |
获取价格 |
Flash, 2MX32, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80 | |
M58LV064B150ZA6T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories | |
M58LV064B150ZA6T | NUMONYX |
获取价格 |
Flash, 2MX32, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80 | |
M58LW032 | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory | |
M58LW032A | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory | |
M58LW032A110N1 | STMICROELECTRONICS |
获取价格 |
2MX16 FLASH 3V PROM, 110ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56 | |
M58LW032A110N1T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory | |
M58LW032A110N6 | STMICROELECTRONICS |
获取价格 |
2MX16 FLASH 3V PROM, 110ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56 | |
M58LW032A110N6T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory | |
M58LW032A110ZA1T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |