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M58LV064B150N6T PDF预览

M58LV064B150N6T

更新时间: 2024-01-20 13:26:42
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
65页 450K
描述
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories

M58LV064B150N6T 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:PLASTIC, TSOP-56针数:56
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.48
最长访问时间:150 ns其他特性:SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE
备用内存宽度:16JESD-30 代码:R-PDSO-G56
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:32功能数量:1
端子数量:56字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX32封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
编程电压:3 V认证状态:Not Qualified
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子位置:DUAL
类型:NOR TYPEBase Number Matches:1

M58LV064B150N6T 数据手册

 浏览型号M58LV064B150N6T的Datasheet PDF文件第2页浏览型号M58LV064B150N6T的Datasheet PDF文件第3页浏览型号M58LV064B150N6T的Datasheet PDF文件第4页浏览型号M58LV064B150N6T的Datasheet PDF文件第5页浏览型号M58LV064B150N6T的Datasheet PDF文件第6页浏览型号M58LV064B150N6T的Datasheet PDF文件第7页 
M58LV064A  
M58LV064B  
64 Mbit (4Mb x16 or 2Mb x32, Uniform Block, Burst)  
3V Supply Flash Memories  
PRELIMINARY DATA  
FEATURES SUMMARY  
WIDE DATA BUS for HIGH BANDWIDTH  
– M58LV064A: x16  
Figure 1. Packages  
– M58LV064B: x16/x32  
SUPPLY VOLTAGE  
– V = 3.0 to 3.6V M58LV064 core supply  
DD  
– V  
= 1.8 to V for I/O Buffers  
DD  
DDQ  
TSOP56 (N)  
14 x 20mm  
SYNCHRONOUS/ASYNCHRONOUS READ  
– Synchronous Burst read  
– Pipelined Synchronous Burst Read  
– Asynchronous Random Read  
TBGA  
– Asynchronous Address Latch Controlled  
Read  
– Page Read  
TBGA64 (ZA)  
10 x 13mm  
ACCESS TIME  
– Synchronous Burst Read up to 66MHz  
– Asynchronous Page Mode Read 150/25ns  
– Random Read 150ns  
TBGA  
PROGRAMMING TIME  
– 16 Word or 8 Double-Word Write Buffer  
– 12µs Word effective programming time  
64 UNIFORM 64 KWord MEMORY BLOCKS  
BLOCK PROTECTION/ UNPROTECTION  
PROGRAM and ERASE SUSPEND  
OTP SECURITY AREA  
TBGA80 (ZA)  
10 x13mm  
COMMON FLASH INTERFACE  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code M58LV064A: 0015h  
– Device Code M58LV064B: 0014h  
December 2002  
1/65  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

与M58LV064B150N6T相关器件

型号 品牌 获取价格 描述 数据表
M58LV064B150ZA1 STMICROELECTRONICS

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2MX32 FLASH 3V PROM, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80
M58LV064B150ZA1 NUMONYX

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Flash, 2MX32, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80
M58LV064B150ZA1T STMICROELECTRONICS

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64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150ZA1T NUMONYX

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Flash, 2MX32, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80
M58LV064B150ZA6 NUMONYX

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Flash, 2MX32, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80
M58LV064B150ZA6T STMICROELECTRONICS

获取价格

64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150ZA6T NUMONYX

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Flash, 2MX32, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80
M58LW032 STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A110N1 STMICROELECTRONICS

获取价格

2MX16 FLASH 3V PROM, 110ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56