生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TBGA, | 针数: | 64 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.52 |
最长访问时间: | 150 ns | 其他特性: | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE |
JESD-30 代码: | R-PBGA-B64 | 长度: | 13 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 64 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE | 并行/串行: | PARALLEL |
编程电压: | 3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子节距: | 1 mm | 端子位置: | BOTTOM |
宽度: | 10 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M58LV064B | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories | |
M58LV064B150N1T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories | |
M58LV064B150N6T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories | |
M58LV064B150ZA1 | STMICROELECTRONICS |
获取价格 |
2MX32 FLASH 3V PROM, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80 | |
M58LV064B150ZA1 | NUMONYX |
获取价格 |
Flash, 2MX32, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80 | |
M58LV064B150ZA1T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories | |
M58LV064B150ZA1T | NUMONYX |
获取价格 |
Flash, 2MX32, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80 | |
M58LV064B150ZA6 | NUMONYX |
获取价格 |
Flash, 2MX32, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80 | |
M58LV064B150ZA6T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories | |
M58LV064B150ZA6T | NUMONYX |
获取价格 |
Flash, 2MX32, 150ns, PBGA80, 10 X 13 MM, 1 MM PITCH, TBGA-80 |