M58LT128HST8ZA6E

更新时间： 2024-01-06 18:20:53

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
110页	2025K
描述
128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories

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M58LT128HST8ZA6E 数据手册

M58LT128HST

M58LT128HSB

128 Mbit (8 Mb ×16, multiple bank, multilevel interface, burst)

1.8 V supply, secure Flash memories

Features

■ Supply voltage

– V = 1.7 V to 2.0 V for Program, Erase

and Read

– V

= 2.7 V to 3.6 V for I/O buffers

DDQ

BGA

– V = 9 V for fast program

■ Synchronous/Asynchronous Read

– Synchronous Burst Read mode: 52 MHz

– Asynchronous Page Read mode

– Random access: 85 ns

TBGA64 (ZA)

10 × 13 mm

■ Synchronous Burst Read Suspend

■ Programming time

– 2.5 µs typical word program time using

Buffer Enhanced Factory Program

command

■ Electronic signature

– Manufacturer code: 20h

– Top device codes:

M58LT128HST: 88D6h

■ Memory organization

– Multiple bank memory array: 8-Mbit banks

– Parameter blocks (top or bottom location)

– Bottom device codes

M58LT128HSB: 88D7h

■ Dual operations

■ TBGA64 package

– program/erase in one bank while read in

others

– ECOPACK® available

– No delay between Read and Write

operations

■ Block protection

– All blocks protected at power-up

– Any combination of blocks can be protected

with zero latency

– Absolute write protection with V = V

■ Security

– Software security features

– 64-bit unique device number

– 2112-bit user programmable OTP Cells

■ Common flash interface (CFI)

■ 100 000 program/erase cycles per block

December 2007

Rev 3

1/110

www.numonyx.com

12 3 4 5 6 7...110

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