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M58BW032BB60T3 PDF预览

M58BW032BB60T3

更新时间: 2024-11-20 06:29:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
60页 826K
描述
IC,EEPROM,NOR FLASH,1MX32,CMOS,QFP,80PIN,PLASTIC

M58BW032BB60T3 数据手册

 浏览型号M58BW032BB60T3的Datasheet PDF文件第2页浏览型号M58BW032BB60T3的Datasheet PDF文件第3页浏览型号M58BW032BB60T3的Datasheet PDF文件第4页浏览型号M58BW032BB60T3的Datasheet PDF文件第5页浏览型号M58BW032BB60T3的Datasheet PDF文件第6页浏览型号M58BW032BB60T3的Datasheet PDF文件第7页 
M58BW032BT, M58BW032BB  
M58BW032DT, M58BW032DB  
32 Mbit (1Mb x32, Boot Block, Burst)  
3.3V Supply Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
VDD = 3.0V to 3.6V for Program, Erase  
and Read  
VDDQ = VDDQIN = 1.6V to 3.6V for I/O  
Buffers  
HIGH PERFORMANCE  
Access Time: 45, 55 and 60ns  
75MHz Effective Zero Wait-State Burst  
Read  
PQFP80 (T)  
Synchronous Burst Reads  
Asynchronous Page Reads  
MEMORY ORGANIZATION  
– Eight 64 Kbit small parameter Blocks  
BGA  
– Four 128Kbit large parameter Blocks (of  
which one is OTP)  
– Sixty-two 512Kbit main Blocks  
LBGA80 (ZA)  
10 x 8 ball array  
HARDWARE BLOCK PROTECTION  
WP pin Lock Program and Erase  
VPEN signal for Program/Erase Enable  
SOFTWARE BLOCK PROTECTION  
ELECTRONIC SIGNATURE  
Tuning Protection to Lock Program and  
Erase with 64-bit User Programmable  
Password (M58BW032B version only)  
Manufacturer Code: 20h  
Top Device Code M58BW032xT: 8838h  
Bottom Device Code M58BW032xB:  
8837h  
SECURITY  
64-bit Unique Device Identifier (UID)  
OPERATING TEMPERATURE RANGE  
FAST PROGRAMMING  
Automotive (Grade 3): 40 to 125°C  
Industrial (Grade 6): 40 to 90°C  
Write to Buffer and Program capability  
OPTIMIZED FOR FDI DRIVERS  
Common Flash Interface (CFI)  
Fast Program/Erase Suspend feature in  
each block  
LOW POWER CONSUMPTION  
100µA Typical Standby  
November 2004  
1/60  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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