Datasheet > 逻辑 > 栅极> M54HC21KT

M54HC21KT

更新时间： 2024-10-01 13:10:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		输入元件
页数	文件大小	规格书
9页	235K
描述
Rad-Hard Dual 4-Input AND Gate

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中文翻译

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技术参数
数据手册

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M54HC21KT 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.74	Is Samacsys：	N
逻辑集成电路类型：	AND GATE	Base Number Matches：	1

M54HC21KT 数据手册

M54HC21

M74HC21

DUAL 4-INPUT AND GATE

HIGH SPEED

t_PD= 10 ns (TYP.) AT V_CC= 5 V

LOW POWER DISSIPATION

I_CC= 1 µA (MAX.) AT T_A= 25 °C

HIGH NOISE IMMUNITY

V_NIH= V_NIL= 28% V_CC(MIN.)

OUTPUT DRIVE CAPABILITY

10 LSTTL LOADS

SYMMETRICAL OUTPUT IMPEDANCE

I_OH= I_OL= 4 mA (MIN.)

BALANCED PROPAGATION DELAYS

t_PLH= t_PHL

WIDE OPERATING VOLTAGE RANGE

B1R

(Plastic Package)

F1R

(Ceramic Package)

M1R

(Micro Package)

C1R

(Chip Carrier)

V_CC(OPR) = 2 V TO 6 V

PIN AND FUNCTION COMPATIBLE

WITH 54/74LS21

ORDER CODES :

M54HC21F1R

M74HC21B1R

M74HC21M1R

M74HC21C1R

DESCRIPTION

PIN CONNECTIONS (top view)

The M54/74HC21 is a high speed CMOS DUAL 4-

INPUTAND GATEfabricated in silicongate C²MOS

technology. It has the same high speed perform-

ance of LSTTL combinedwithtrue CMOSlowpower

consumption.

The internal circuits is composed of 3 stages includ-

ing bufferedoutput, which gives highnoise immunity

and a stable output.

All inputs are equipped with protection circuits

against static discharge and transient excess volt-

age.

INPUT AND OUTPUT EQUIVALENT CIRCUIT

NC =

No Internal

Connection

December 1992

1/9

12 3 4 5 6 7...9

中文翻译

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