是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, DIP14,.3 | 针数: | 14 |
Reach Compliance Code: | not_compliant | HTS代码: | 8542.39.00.01 |
风险等级: | 5.15 | Is Samacsys: | N |
控制类型: | ENABLE LOW | 系列: | HC/UH |
JESD-30 代码: | R-CDIP-T14 | JESD-609代码: | e0 |
长度: | 19 mm | 负载电容(CL): | 50 pF |
逻辑集成电路类型: | BUS DRIVER | 最大I(ol): | 0.006 A |
位数: | 1 | 功能数量: | 4 |
端口数量: | 2 | 端子数量: | 14 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
输出特性: | 3-STATE | 输出极性: | TRUE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | DIP |
封装等效代码: | DIP14,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 2/6 V | Prop。Delay @ Nom-Sup: | 22 ns |
传播延迟(tpd): | 160 ns | 认证状态: | Not Qualified |
座面最大高度: | 3.7 mm | 子类别: | Bus Driver/Transceivers |
最大供电电压 (Vsup): | 6 V | 最小供电电压 (Vsup): | 2 V |
标称供电电压 (Vsup): | 4.5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 总剂量: | 50k Rad(Si) V |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M54HC125DG | STMICROELECTRONICS |
获取价格 |
Rad-Hard Quad Bus Buffer 3-State |
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M54HC125F1R | STMICROELECTRONICS |
获取价格 |
QUAD BUS BUFFERS 3-STATE |
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M54HC125K | STMICROELECTRONICS |
获取价格 |
RAD-HARD QUAD BUS BUFFER (3-STATE) |
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M54HC125K1 | STMICROELECTRONICS |
获取价格 |
RAD-HARD QUAD BUS BUFFER (3-STATE) |
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M54HC125KG | STMICROELECTRONICS |
获取价格 |
抗辐照四路总线3态缓冲器 |
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M54HC125KT | STMICROELECTRONICS |
获取价格 |
暂无描述 |
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M54HC125M1R | STMICROELECTRONICS |
获取价格 |
QUAD BUS BUFFERS 3-STATE |
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M54HC126 | STMICROELECTRONICS |
获取价格 |
QUAD BUS BUFFERS 3-STATE |
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M54HC126B1R | STMICROELECTRONICS |
获取价格 |
QUAD BUS BUFFERS 3-STATE |
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M54HC126C1R | STMICROELECTRONICS |
获取价格 |
QUAD BUS BUFFERS 3-STATE |
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