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M54HC03K1 PDF预览

M54HC03K1

更新时间: 2024-02-18 08:43:37
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发器逻辑集成电路输入元件
页数 文件大小 规格书
7页 106K
描述
RAD-HARD QUAD 2-INPUT OPEN DRAIN NAND GATE

M54HC03K1 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:DFP
包装说明:DFP, FL14,.3针数:14
Reach Compliance Code:not_compliantHTS代码:8542.39.00.01
风险等级:5.81Is Samacsys:N
系列:HC/UHJESD-30 代码:R-CDFP-F14
JESD-609代码:e0长度:9.95 mm
负载电容(CL):50 pF逻辑集成电路类型:NAND GATE
最大I(ol):0.004 A功能数量:4
输入次数:2端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
输出特性:OPEN-DRAIN封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DFP封装等效代码:FL14,.3
封装形状:RECTANGULAR封装形式:FLATPACK
峰值回流温度(摄氏度):NOT SPECIFIED电源:2/6 V
Prop。Delay @ Nom-Sup:22 ns传播延迟(tpd):90 ns
认证状态:Not Qualified施密特触发器:NO
子类别:Gates最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):4.5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
总剂量:50k Rad(Si) V宽度:6.91 mm
Base Number Matches:1

M54HC03K1 数据手册

 浏览型号M54HC03K1的Datasheet PDF文件第2页浏览型号M54HC03K1的Datasheet PDF文件第3页浏览型号M54HC03K1的Datasheet PDF文件第4页浏览型号M54HC03K1的Datasheet PDF文件第5页浏览型号M54HC03K1的Datasheet PDF文件第6页浏览型号M54HC03K1的Datasheet PDF文件第7页 
M54HC03  
RAD-HARD QUAD 2-INPUT OPEN DRAIN NAND GATE  
HIGH SPEED:  
= 8ns (TYP.) at V = 6V  
t
PD  
CC  
LOW POWER DISSIPATION:  
= 1µA(MAX.) at T =25°C  
I
CC  
A
HIGH NOISE IMMUNITY:  
= V = 28% V (MIN.)  
V
NIH  
NIL  
CC  
DILC-14  
FPC-14  
BALANCED PROPAGATION DELAYS:  
t
t
PLH  
PHL  
WIDE OPERATING VOLTAGE RANGE:  
(OPR) = 2V to 6V  
ORDER CODES  
PACKAGE  
V
CC  
PIN AND FUNCTION COMPATIBLE WITH  
54 SERIES 03  
SPACE GRADE-1: ESA SCC QUALIFIED  
50 krad QUALIFIED, 100 krad AVAILABLE ON  
REQUEST  
FM  
EM  
DILC  
FPC  
M54HC03D  
M54HC03K  
M54HC03D1  
M54HC03K1  
The internal circuit is composed of 3 stages  
including buffer output, which enables high noise  
immunity and stable output. This device can, with  
an external pull-up resistor, be used in wired AND  
configuration. This device can be also used as a  
led driver and in any other application requiring a  
current sink.  
NO SEL UNDER HIGH LET HEAVY IONS  
IRRADIATION  
DEVICE FULLY COMPLIANT WITH  
SCC-9201-114  
DESCRIPTION  
The M54HC03 is an high speed CMOS QUAD  
2-INPUT OPEN DRAIN NAND GATE fabricated  
with silicon gate C MOS technology.  
All inputs are equipped with protection circuits  
against static discharge and transient excess  
voltage.  
2
PIN CONNECTION  
March 2004  
1/7  

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