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M54HC03_04 PDF预览

M54HC03_04

更新时间: 2024-11-04 04:18:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 输入元件
页数 文件大小 规格书
7页 106K
描述
RAD-HARD QUAD 2-INPUT OPEN DRAIN NAND GATE

M54HC03_04 数据手册

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M54HC03  
RAD-HARD QUAD 2-INPUT OPEN DRAIN NAND GATE  
HIGH SPEED:  
= 8ns (TYP.) at V = 6V  
t
PD  
CC  
LOW POWER DISSIPATION:  
= 1µA(MAX.) at T =25°C  
I
CC  
A
HIGH NOISE IMMUNITY:  
= V = 28% V (MIN.)  
V
NIH  
NIL  
CC  
DILC-14  
FPC-14  
BALANCED PROPAGATION DELAYS:  
t
t
PLH  
PHL  
WIDE OPERATING VOLTAGE RANGE:  
(OPR) = 2V to 6V  
ORDER CODES  
PACKAGE  
V
CC  
PIN AND FUNCTION COMPATIBLE WITH  
54 SERIES 03  
SPACE GRADE-1: ESA SCC QUALIFIED  
50 krad QUALIFIED, 100 krad AVAILABLE ON  
REQUEST  
FM  
EM  
DILC  
FPC  
M54HC03D  
M54HC03K  
M54HC03D1  
M54HC03K1  
The internal circuit is composed of 3 stages  
including buffer output, which enables high noise  
immunity and stable output. This device can, with  
an external pull-up resistor, be used in wired AND  
configuration. This device can be also used as a  
led driver and in any other application requiring a  
current sink.  
NO SEL UNDER HIGH LET HEAVY IONS  
IRRADIATION  
DEVICE FULLY COMPLIANT WITH  
SCC-9201-114  
DESCRIPTION  
The M54HC03 is an high speed CMOS QUAD  
2-INPUT OPEN DRAIN NAND GATE fabricated  
with silicon gate C MOS technology.  
All inputs are equipped with protection circuits  
against static discharge and transient excess  
voltage.  
2
PIN CONNECTION  
March 2004  
1/7  

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