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M54HC03 PDF预览

M54HC03

更新时间: 2024-11-03 22:46:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 输入元件
页数 文件大小 规格书
9页 235K
描述
QUAD 2-INPUT OPEN DRAIN NAND GATE

M54HC03 数据手册

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M54HC03  
M74HC03  
QUAD 2-INPUT OPEN DRAIN NAND GATE  
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HIGH SPEED  
tPZ = 5 ns (TYP.) AT VCC = 5 V  
LOW POWER DISSIPATION  
ICC = 1 µA (MAX.) AT TA = 25 °C  
HIGH NOISE IMMUNITY  
VNIH = VNIL = 28 % VCC (MIN.)  
OUTPUT DRIVE CAPABILITY  
10 LSTTL LOADS  
BALANCED PROPAGATION DELAYS  
tPLH = tPHL  
WIDE OPERATING VOLTAGE RANGE  
VCC (OPR) = 2 V TO 6 V  
PIN AND FUNCTION COMPATIBLE WITH  
B1R  
(Plastic Package)  
F1R  
(Ceramic Package)  
M1R  
(Micro Package)  
C1R  
(Chip Carrier)  
54/74LS03  
ORDER CODES :  
M54HC03F1R  
M74HC03M1R  
M74HC03B1R  
M74HC03C1R  
DESCRIPTION  
The M54/74HC03 is a high speed CMOS QUAD 2-  
INPUTOPEN DRAIN NAND GATE fabricated in sili-  
con gate C2MOS technology.  
PIN CONNECTIONS (top view)  
It has the same high speed performance of LSTTL  
combined with true CMOS low power consumption.  
The internal circuit is composed of 3 stages includ-  
ing buffer output, which gives high noise immunity  
and stable output. This device can, with an external  
pull-up resistor, be used in wiredAND configuration.  
This device can be also used as a led driver and in  
any other application requiring a current sink. All in-  
puts are equipped with protection circuits against  
static discharge and transient excess voltage.  
INPUT AND OUTPUT EQUIVALENT CIRCUIT  
NC =  
No Internal  
Connection  
January 1993  
1/9  

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