M54563WP

更新时间： 2024-11-20 12:23:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		晶体二极管晶体管达林顿晶体管
页数	文件大小	规格书
5页	210K
描述
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

M54563WP 技术参数

生命周期：	Not Recommended	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.77
Base Number Matches：	1

M54563WP 数据手册

MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>

M54563WP

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION

PIN CONFIGURATION

M54563WP is eight-circuit output-sourcing darlington

transistor array. The circuits are made of PNP and NPN

transistors. This semiconductor integrated circuit

performs high current driving with extremely low input-

current supply.

IN1→

IN2→

IN3→

IN4→

IN5→

IN6→

IN7→

IN8→

→O1

17 →O2

→O3

15 →O4

FEATURES

● High breakdown voltage (BVCEO > 50V)

● High-current driving (Io(max) = –500mA)

● With clamping diodes

● Driving available with PMOS IC output of 6 ~ 16V or

with TTL output

INPUT

OUTPUT

→O5

→O6

→O7

→O8

GND

● Output current-sourcing type

APPLICATIONS

Package type 18P4X

Drives of relays, printers, LEDs, fluorescent display tubes

and lamps, and interfaces between MOS-bipolar logic

systems and relays, solenoids, or small motors

CIRCUIT DIAGRAM

FUNCTION

The M54563WP each have eight circuits, which are made

of input inverters and current-sourcing outputs.

The outputs are made of PNP transistors and NPN

Darlington transistors. The PNP transistor base current is

constant. A clamping diode is provided between each

output and GND. VS and GND are used commonly

among the eight circuits.

The inputs have resistance of 3kΩ, and voltage of up to

10V is applicable. Output current is 500 mA maximum.

Supply voltage VS is 50V maximum.

20K

INPUT

7.2K

1.5K

OUTPUT

GND

The eight circuits share the VS and GND.

The diode, indicated with the dotted line, is parasitic, and

cannot be used.

Unit:Ω

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃)

Symbol

VCEO

Parameter

Collector-emitter voltage

Supply voltage

Conditions

Ratings

–0.5 ～ +50

Unit

Output , L

–0.5 ～ +10

– 500

Input voltage

Output current

Clamping diode forward current

Clamping diode reverse voltage

Power dissipation

Current per circuit output, H

– 500

1.79

Ta = 25℃, when mounted on board

Topr

Tstg

Operating temperature

Storage temperature

–20 ～ +75

–55 ～ +125

℃

# : Unused Input pins must be connected to GND.

Jul-2011

12 3 4 5

中文翻译

下载PDF

与M54563WP相关器件

型号	品牌	获取价格	描述	数据表
M54564FP	MITSUBISHI	获取价格	8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
M54564P	MITSUBISHI	获取价格	8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
M54565P	MITSUBISHI	获取价格	8 UNIT 50MA TRANSISTOR ARRAY
M54566DP	MITSUBISHI	获取价格	7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
M54566FP	MITSUBISHI	获取价格	7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
M54566P	MITSUBISHI	获取价格	7 UNIT 400MA DARLINGTON TRANSISTOR ARRAY
M54566P_99	MITSUBISHI	获取价格	7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
M54566WP	MITSUBISHI	获取价格	7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
M54567FP	MITSUBISHI	获取价格	4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
M54567P	MITSUBISHI	获取价格	4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

与M54563WP相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

M54563WP

M54563WP 技术参数

M54563WP 数据手册

与M54563WP相关器件

与M54563WP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

M54563WP

M54563WP 技术参数

M54563WP 数据手册

与M54563WP相关器件

与M54563WP相关文章

您还可以找

您在本页遇到什么问题？