MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54562P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
PIN CONFIGURATION
M54562P and M54562FP are eight-circuit output-sourcing
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
IN8→
1
2
3
4
5
6
7
8
9
18 →O1
17 →O2
16 →O3
15 →O4
14 →O5
13 →O6
12 →O7
INPUT
OUTPUT
FEATURES
Á High breakdown voltage (BVCEO ≥ 50V)
Á High-current driving (Io(max) = –500mA)
Á With output clamping diodes
→O8
11
10
GND
VS
Package type 18P4G(P)
Á
Driving available with PMOS IC output of 6 ~ 16V or with TTL output
Á Wide operating temperature range (Ta = –20 to +75°C)
Á Output current-sourcing type
NC
1
2
20 NC
19
18
17
16
15
14
13
12
→
→
→
→
→
→
→
→
IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
IN8→
O1
O2
O3
O4
O5
O6
O7
O8
3
APPLICATION
4
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
5
OUTPUT
INPUT
6
7
8
9
FUNCTION
10
11 GND
VS
The M54562P and M54562FP each have eight circuits,
which are made of input inverters and current-sourcing out-
puts. The outputs are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current is
constant. A spike-killer clamping diode is provided between
each output and GND. VS and GND are used commonly
among the eight circuits.
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
VS
The inputs have resistance of 8.5kΩ, and voltage of up to
30V is applicable. Output current is 500mA maximum. Sup-
ply voltage VS is 50V maximum.
20K
8.5K
INPUT
The M54562FP is enclosed in a molded small flat package,
enabling space-saving design.
7.2K
1.5K
3K
OUTPUT
GND
The eight circuits share the V
S
and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
Aug. 1999