Datasheet > M53D128168A_1

M53D128168A_1

更新时间： 2024-09-26 05:46:55

品牌	Logo	应用领域
晶豪 - ESMT		动态存储器双倍数据速率
页数	文件大小	规格书
46页	1076K
描述
2M x 16 Bit x 4 Banks Mobile DDR SDRAM

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中文翻译

获取价格

数据手册

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M53D128168A_1 数据手册

ESMT

M53D128168A

Operation Temperature Condition -40°C~85°C

Mobile DDR SDRAM

2M x 16 Bit x 4 Banks

Mobile DDR SDRAM

Features

JEDEC Standard

Internal pipelined double-data-rate architecture, two data

access per clock cycle

Bi-directional data strobe (DQS)

No DLL; CLK to DQS is not synchronized.

All inputs except data & DM are sampled at the rising

edge of the system clock(CLK)

Data I/O transitions on both edges of data strobe (DQS)

DQS is edge-aligned with data for READ; center-aligned

with data for WRITE

Data mask (DM) for write masking only

V_DD/V_DDQ= 1.7V ~ 1.9V

Auto & Self refresh

15.6us refresh interval (64ms refresh period, 4K cycle)

1.8V LVCMOS-compatible inputs

60 ball BGA package

Differential clock inputs (CLK and CLK )

Quad bank operation

CAS Latency : 2, 3

Burst Type : Sequential and Interleave

Burst Length : 2, 4, 8

Special function support

PASR (Partial Array Self Refresh)

Internal TCSR (Temperature Compensated Self

Refresh)

DS (Driver Strength)

Ordering information :

Part NO.

MAX FREQ

133MHz

VDD

PACKAGE

8x13 mm

BGA

COMMENTS

Pb-free

M53D128168A -7.5BAIG

M53D128168A -10BAIG

1.8V

100MHz

Pb-free

Functional Block Diagram

CLK

Clock

Generator

CLK

Bank D

Bank C

Bank B

CKE

Row

Address

Buffer

Refresh

Counter

Mode Register &

Extended Mode

Bank A

DQS

Sense Amplifier

Column Decoder

Column

Address

Buffer

Refresh

Counter

RAS

CAS

Data Control Circuit

Elite Semiconductor Memory Technology Inc.

Publication Date : Dec. 2008

Revision : 1.0 1/46

12 3 4 5 6 7...46

中文翻译

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与M53D128168A_1相关器件

型号	品牌	获取价格	描述	数据表
M53D128168A-10BAG	ESMT	获取价格	2M x 16 Bit x 4 Banks Mobile DDR SDRAM
M53D128168A-10BAIG	ESMT	获取价格	2M x 16 Bit x 4 Banks Mobile DDR SDRAM
M53D128168A-10BG	ESMT	获取价格	2M x 16 Bit x 4 Banks Mobile DDR SDRAM
M53D128168A-5BG2E	ESMT	获取价格	DDR DRAM, 8MX16, 5ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, B
M53D128168A-5BIG2E	ESMT	获取价格	DDR DRAM, 8MX16, 5ns, CMOS, PBGA60, BGA-60
M53D128168A-6BG2E	ESMT	获取价格	DDR DRAM, 8MX16, 5.5ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE,
M53D128168A-6BIG2E	ESMT	获取价格	DDR DRAM, 8MX16, 5.5ns, CMOS, PBGA60, BGA-60
M53D128168A-7.5BAG	ESMT	获取价格	2M x 16 Bit x 4 Banks Mobile DDR SDRAM
M53D128168A-7.5BAIG	ESMT	获取价格	2M x 16 Bit x 4 Banks Mobile DDR SDRAM
M53D128168A-7.5BG	ESMT	获取价格	2M x 16 Bit x 4 Banks Mobile DDR SDRAM